TY - JOUR
T1 - Self-powered sensitive and stable UV-visible photodetector based on GdNiO3/Nb-doped SrTiO3 heterojunctions
AU - Wang, Junling
AU - Wang, Le
AU - Chang, Lei
AU - Yin, Xinmao
AU - You, Lu
AU - Zhao, Jia-Li
AU - Guo, Haizhong
AU - Jin, Kuijuan
AU - Ibrahim, Kurash
AU - Wang, Jiaou
AU - Rusydi, Andrivo
N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].
PY - 2017/1/23
Y1 - 2017/1/23
N2 - The properties of perovskite nickelates are very sensitive to their oxygen content, which allows us to tune their electronic structures by varying the oxygen partial pressure during film deposition. Under the optimized condition, we have obtained GdNiO3 films that are sensitive to a wide spectrum of light. By combining the GdNiO3 film with Nb-doped SrTiO3 to form a heterojunction, we design a self-powered photodetector with high sensitivity toward light with a wavelength between 650 nm and 365 nm. Under 365 nm illumination (50 μW/cm2), the device shows a responsivity of 0.23 A/W at 0 V bias, comparable to or even better than the ultraviolet photodetectors made of semiconductor materials such as GaN or ZnO. The photo-dark ratio can be close to 103 when the power light density reaches 0.6 mW/cm2. Moreover, the device performance is very stable without any decay after 6 months. © 2017 Author(s).
AB - The properties of perovskite nickelates are very sensitive to their oxygen content, which allows us to tune their electronic structures by varying the oxygen partial pressure during film deposition. Under the optimized condition, we have obtained GdNiO3 films that are sensitive to a wide spectrum of light. By combining the GdNiO3 film with Nb-doped SrTiO3 to form a heterojunction, we design a self-powered photodetector with high sensitivity toward light with a wavelength between 650 nm and 365 nm. Under 365 nm illumination (50 μW/cm2), the device shows a responsivity of 0.23 A/W at 0 V bias, comparable to or even better than the ultraviolet photodetectors made of semiconductor materials such as GaN or ZnO. The photo-dark ratio can be close to 103 when the power light density reaches 0.6 mW/cm2. Moreover, the device performance is very stable without any decay after 6 months. © 2017 Author(s).
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U2 - 10.1063/1.4974144
DO - 10.1063/1.4974144
M3 - RGC 21 - Publication in refereed journal
SN - 0003-6951
VL - 110
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 4
M1 - 043504
ER -