Self-Assembled Si-Ge Nanorings with Size and Composition-Control

J. H. He; C. L. Hsin; C. W. Wang; L. J. Chen

doi:10.1109/iwjt.2006.220900

Self-Assembled Si-Ge Nanorings with Size and Composition-Control

J. H. He, C. L. Hsin, C. W. Wang, L. J. Chen^*

^*Corresponding author for this work

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

Abstract

Self-assembled single-crystal nanorings (NRs), as small as 10 nm. on Si and Si-Ge alloys have been fabricated by the mediation of Au nanodots. Si-Ge thin films were transformed into Si-Ge nanorings (silicon nanorings doped with controlled amount of Ge) with the assistance of Au catalysts deposited directly onto the thin film with a simple process. The mechanism of nanoring formation involves the mediation by Au nanodots and evaporation of Au-Si (Au-Si-Ge) eutectic liquid droplets at high temperatures. The process promises to be an effective nanofabrication technique to produce high density and uniform in size Si and Si-Ge nanorings.

Original language	English
Title of host publication	IWJT-2006
Subtitle of host publication	Extended Abstracts of the Sixth International Workshop on Junction Technology
Editors	Yu-Long Jiang, Guo-Ping Ru, Xin-Ping Qu, Bing-Zong Li
Publisher	IEEE
Pages	236-239
ISBN (Print)	1424400473, 9781424400478
DOIs	https://doi.org/10.1109/iwjt.2006.220900
Publication status	Published - May 2006
Externally published	Yes
Event	Extended Abstracts of the 6th International Workshop on Junction Technology, IWJT 2006 - Shanghai, China Duration: 15 May 2006 → 16 May 2006

Publication series

Name	International Workshop on Junction Technology
Publisher	IEEE

Workshop

Workshop	Extended Abstracts of the 6th International Workshop on Junction Technology, IWJT 2006
Country/Territory	China
City	Shanghai
Period	15/05/06 → 16/05/06

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This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1109/iwjt.2006.220900

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He, J. H., Hsin, C. L., Wang, C. W., & Chen, L. J. (2006). Self-Assembled Si-Ge Nanorings with Size and Composition-Control. In Y.-L. Jiang, G.-P. Ru, X.-P. Qu, & B.-Z. Li (Eds.), IWJT-2006: Extended Abstracts of the Sixth International Workshop on Junction Technology (pp. 236-239). Article 1669487 (International Workshop on Junction Technology). IEEE. https://doi.org/10.1109/iwjt.2006.220900

@inproceedings{49fde411726948f5acb0aeb0161eec1d,

title = "Self-Assembled Si-Ge Nanorings with Size and Composition-Control",

abstract = "Self-assembled single-crystal nanorings (NRs), as small as 10 nm. on Si and Si-Ge alloys have been fabricated by the mediation of Au nanodots. Si-Ge thin films were transformed into Si-Ge nanorings (silicon nanorings doped with controlled amount of Ge) with the assistance of Au catalysts deposited directly onto the thin film with a simple process. The mechanism of nanoring formation involves the mediation by Au nanodots and evaporation of Au-Si (Au-Si-Ge) eutectic liquid droplets at high temperatures. The process promises to be an effective nanofabrication technique to produce high density and uniform in size Si and Si-Ge nanorings.",

author = "He, {J. H.} and Hsin, {C. L.} and Wang, {C. W.} and Chen, {L. J.}",

year = "2006",

month = may,

doi = "10.1109/iwjt.2006.220900",

language = "English",

isbn = "1424400473",

series = "International Workshop on Junction Technology",

publisher = "IEEE",

pages = "236--239",

editor = "Yu-Long Jiang and Guo-Ping Ru and Xin-Ping Qu and Bing-Zong Li",

booktitle = "IWJT-2006",

address = "United States",

note = "Extended Abstracts of the 6th International Workshop on Junction Technology, IWJT 2006 ; Conference date: 15-05-2006 Through 16-05-2006",

}

He, JH, Hsin, CL, Wang, CW & Chen, LJ 2006, Self-Assembled Si-Ge Nanorings with Size and Composition-Control. in Y-L Jiang, G-P Ru, X-P Qu & B-Z Li (eds), IWJT-2006: Extended Abstracts of the Sixth International Workshop on Junction Technology., 1669487, International Workshop on Junction Technology, IEEE, pp. 236-239, Extended Abstracts of the 6th International Workshop on Junction Technology, IWJT 2006, Shanghai, China, 15/05/06. https://doi.org/10.1109/iwjt.2006.220900

Self-Assembled Si-Ge Nanorings with Size and Composition-Control. / He, J. H.; Hsin, C. L.; Wang, C. W. et al.
IWJT-2006: Extended Abstracts of the Sixth International Workshop on Junction Technology. ed. / Yu-Long Jiang; Guo-Ping Ru; Xin-Ping Qu; Bing-Zong Li. IEEE, 2006. p. 236-239 1669487 (International Workshop on Junction Technology).

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

TY - GEN

T1 - Self-Assembled Si-Ge Nanorings with Size and Composition-Control

AU - He, J. H.

AU - Hsin, C. L.

AU - Wang, C. W.

AU - Chen, L. J.

PY - 2006/5

Y1 - 2006/5

N2 - Self-assembled single-crystal nanorings (NRs), as small as 10 nm. on Si and Si-Ge alloys have been fabricated by the mediation of Au nanodots. Si-Ge thin films were transformed into Si-Ge nanorings (silicon nanorings doped with controlled amount of Ge) with the assistance of Au catalysts deposited directly onto the thin film with a simple process. The mechanism of nanoring formation involves the mediation by Au nanodots and evaporation of Au-Si (Au-Si-Ge) eutectic liquid droplets at high temperatures. The process promises to be an effective nanofabrication technique to produce high density and uniform in size Si and Si-Ge nanorings.

AB - Self-assembled single-crystal nanorings (NRs), as small as 10 nm. on Si and Si-Ge alloys have been fabricated by the mediation of Au nanodots. Si-Ge thin films were transformed into Si-Ge nanorings (silicon nanorings doped with controlled amount of Ge) with the assistance of Au catalysts deposited directly onto the thin film with a simple process. The mechanism of nanoring formation involves the mediation by Au nanodots and evaporation of Au-Si (Au-Si-Ge) eutectic liquid droplets at high temperatures. The process promises to be an effective nanofabrication technique to produce high density and uniform in size Si and Si-Ge nanorings.

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U2 - 10.1109/iwjt.2006.220900

DO - 10.1109/iwjt.2006.220900

M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 1424400473

SN - 9781424400478

T3 - International Workshop on Junction Technology

SP - 236

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BT - IWJT-2006

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T2 - Extended Abstracts of the 6th International Workshop on Junction Technology, IWJT 2006

Y2 - 15 May 2006 through 16 May 2006

ER -

Self-Assembled Si-Ge Nanorings with Size and Composition-Control

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