Self-assembled monolayer modifications of organic thin film transistors

Ivan Shuvalov; Rhys Lawson; Hong Ma; Alex Jen; Larry Dalton

doi:10.1117/12.569304

Self-assembled monolayer modifications of organic thin film transistors

Ivan Shuvalov, Rhys Lawson, Hong Ma, Alex Jen, Larry Dalton

Research output: Journal Publications and Reviews › RGC 22 - Publication in policy or professional journal

Abstract

Future generations of flexible, transparent electronics will require the use of polymer based thin-film transistors (TFTs) exhibiting high carrier mobility. The problem of enhancing TFT characteristics is addressed in this report. We investigate the nanoscale, self-assembled monolayer (SAM) influence on organic-based thin film transistors (OTFT) at the interface between semiconducting polymer and both the source/drain metal contacts and the insulator. Capacitance-voltage (C-V) characteristics help to elucidate the role of SAMs in the OTFT structure and the charge injection mechanism. Positive trends and parasitic effects are also addressed in characterization.

Original language	English
Article number	71
Pages (from-to)	437-442
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	5592
DOIs	https://doi.org/10.1117/12.569304
Publication status	Published - 2005
Externally published	Yes
Event	Nanofabrication: Technologies, Devices, and Applications - Philadelphia, PA, United States Duration: 25 Oct 2004 → 28 Oct 2004

Research Keywords

Carrier mobility
Organic thin-film transistors
Polythiophene
Self-assembled monolayers

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title = "Self-assembled monolayer modifications of organic thin film transistors",

abstract = "Future generations of flexible, transparent electronics will require the use of polymer based thin-film transistors (TFTs) exhibiting high carrier mobility. The problem of enhancing TFT characteristics is addressed in this report. We investigate the nanoscale, self-assembled monolayer (SAM) influence on organic-based thin film transistors (OTFT) at the interface between semiconducting polymer and both the source/drain metal contacts and the insulator. Capacitance-voltage (C-V) characteristics help to elucidate the role of SAMs in the OTFT structure and the charge injection mechanism. Positive trends and parasitic effects are also addressed in characterization.",

keywords = "Carrier mobility, Organic thin-film transistors, Polythiophene, Self-assembled monolayers",

author = "Ivan Shuvalov and Rhys Lawson and Hong Ma and Alex Jen and Larry Dalton",

year = "2005",

doi = "10.1117/12.569304",

language = "English",

volume = "5592",

pages = "437--442",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

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publisher = "SPIE - International Society for Optical Engineering",

note = "Nanofabrication: Technologies, Devices, and Applications ; Conference date: 25-10-2004 Through 28-10-2004",

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T1 - Self-assembled monolayer modifications of organic thin film transistors

AU - Shuvalov, Ivan

AU - Lawson, Rhys

AU - Ma, Hong

AU - Jen, Alex

AU - Dalton, Larry

PY - 2005

Y1 - 2005

N2 - Future generations of flexible, transparent electronics will require the use of polymer based thin-film transistors (TFTs) exhibiting high carrier mobility. The problem of enhancing TFT characteristics is addressed in this report. We investigate the nanoscale, self-assembled monolayer (SAM) influence on organic-based thin film transistors (OTFT) at the interface between semiconducting polymer and both the source/drain metal contacts and the insulator. Capacitance-voltage (C-V) characteristics help to elucidate the role of SAMs in the OTFT structure and the charge injection mechanism. Positive trends and parasitic effects are also addressed in characterization.

AB - Future generations of flexible, transparent electronics will require the use of polymer based thin-film transistors (TFTs) exhibiting high carrier mobility. The problem of enhancing TFT characteristics is addressed in this report. We investigate the nanoscale, self-assembled monolayer (SAM) influence on organic-based thin film transistors (OTFT) at the interface between semiconducting polymer and both the source/drain metal contacts and the insulator. Capacitance-voltage (C-V) characteristics help to elucidate the role of SAMs in the OTFT structure and the charge injection mechanism. Positive trends and parasitic effects are also addressed in characterization.

KW - Carrier mobility

KW - Organic thin-film transistors

KW - Polythiophene

KW - Self-assembled monolayers

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DO - 10.1117/12.569304

M3 - RGC 22 - Publication in policy or professional journal

SN - 0277-786X

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EP - 442

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

M1 - 71

T2 - Nanofabrication: Technologies, Devices, and Applications

Y2 - 25 October 2004 through 28 October 2004

ER -

Self-assembled monolayer modifications of organic thin film transistors

Abstract

Research Keywords

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