SELF-ALIGHNED PN JUNCTION AND SILICIDE CONTACT FORMATION BY ION IMPLANT THROUGH TI AND ITS SILICIDE

Bing-Zong Li; Shi-Fang Zhou; Jia Li; Feng Hong; Paul K. Chu

SELF-ALIGHNED PN JUNCTION AND SILICIDE CONTACT FORMATION BY ION IMPLANT THROUGH TI AND ITS SILICIDE

Bing-Zong Li
, Shi-Fang Zhou
, Jia Li
, Feng Hong
, Paul K. Chu

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

Original language	English
Title of host publication	Proceedings of the International Conference
Subtitle of host publication	Materials and Process Characterization for VLSI, 1988 (ICMPC' 88)
Editors	X-F Zong, Y-Y Wang, J Chen
Publisher	World Scientific
Pages	397-400
Publication status	Published - Oct 1988
Externally published	Yes
Event	The International Conference on Materials and Process Characterization for VLSI, 1988 - Shanghai, China Duration: 24 Oct 1988 → 29 Oct 1988

Conference

Conference	The International Conference on Materials and Process Characterization for VLSI, 1988
Abbreviated title	ICMPC '88
Place	China
City	Shanghai
Period	24/10/88 → 29/10/88

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Cite this

@inproceedings{8db0bf2b24724fa692fb6126a734170f,

title = "SELF-ALIGHNED PN JUNCTION AND SILICIDE CONTACT FORMATION BY ION IMPLANT THROUGH TI AND ITS SILICIDE",

author = "Bing-Zong Li and Shi-Fang Zhou and Jia Li and Feng Hong and Chu, \{Paul K.\}",

year = "1988",

month = oct,

language = "English",

pages = "397--400",

editor = "X-F Zong and Y-Y Wang and J Chen",

booktitle = "Proceedings of the International Conference",

publisher = "World Scientific ",

note = "The International Conference on Materials and Process Characterization for VLSI, 1988, ICMPC '88 ; Conference date: 24-10-1988 Through 29-10-1988",

}

Li, B-Z, Zhou, S-F, Li, J, Hong, F & Chu, PK 1988, SELF-ALIGHNED PN JUNCTION AND SILICIDE CONTACT FORMATION BY ION IMPLANT THROUGH TI AND ITS SILICIDE. in X-F Zong, Y-Y Wang & J Chen (eds), Proceedings of the International Conference : Materials and Process Characterization for VLSI, 1988 (ICMPC' 88). World Scientific , pp. 397-400, The International Conference on Materials and Process Characterization for VLSI, 1988, Shanghai, China, 24/10/88.

SELF-ALIGHNED PN JUNCTION AND SILICIDE CONTACT FORMATION BY ION IMPLANT THROUGH TI AND ITS SILICIDE. / Li, Bing-Zong; Zhou, Shi-Fang; Li, Jia et al.
Proceedings of the International Conference : Materials and Process Characterization for VLSI, 1988 (ICMPC' 88). ed. / X-F Zong; Y-Y Wang; J Chen. World Scientific , 1988. p. 397-400.

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

TY - GEN

T1 - SELF-ALIGHNED PN JUNCTION AND SILICIDE CONTACT FORMATION BY ION IMPLANT THROUGH TI AND ITS SILICIDE

AU - Li, Bing-Zong

AU - Zhou, Shi-Fang

AU - Li, Jia

AU - Hong, Feng

AU - Chu, Paul K.

PY - 1988/10

Y1 - 1988/10

M3 - RGC 32 - Refereed conference paper (with host publication)

SP - 397

EP - 400

BT - Proceedings of the International Conference

A2 - Zong, X-F

A2 - Wang, Y-Y

A2 - Chen, J

PB - World Scientific

T2 - The International Conference on Materials and Process Characterization for VLSI, 1988

Y2 - 24 October 1988 through 29 October 1988

ER -