Selective n-type doping in graphene via the aluminium nanoparticle decoration approach

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal

15 Scopus Citations
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Author(s)

  • Xiaoling Shi
  • Guofa Dong
  • Ming Fang
  • Fengyun Wang
  • Hao Lin
  • Wen-Chun Yen
  • Yu-Lun Chueh

Related Research Unit(s)

Detail(s)

Original languageEnglish
Pages (from-to)5417-5421
Journal / PublicationJournal of Materials Chemistry C
Volume2
Issue number27
Online published12 May 2014
Publication statusPublished - 21 Jul 2014

Abstract

Selective and reliable n-type doping as well as tuning the Dirac point of graphene are important for the realization of high-performance complementary circuits. In this work, we present a simple but effective technique to left shift the Dirac point of graphene transistors to induce n-type doping via thermal decoration of Al nanoparticles. The decorated discrete nanoparticles are uniformly distributed on the top of the graphene channel surface with consistent size and shape. Detailed electrical measurements reveal that the decoration can efficiently shift the Dirac point of graphene towards negative gate voltages along with the improved on/off current ratio and excellent air-stability. All these further indicate the technological potency of this doping technique for the fabrication of future CMOS graphene electronics. This journal is © the Partner Organisations 2014.

Citation Format(s)

Selective n-type doping in graphene via the aluminium nanoparticle decoration approach. / Shi, Xiaoling; Dong, Guofa; Fang, Ming; Wang, Fengyun; Lin, Hao; Yen, Wen-Chun; Chan, Kwok Sum; Chueh, Yu-Lun; Ho, Johnny C.

In: Journal of Materials Chemistry C, Vol. 2, No. 27, 21.07.2014, p. 5417-5421.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal