Selective growth of Pb islands on graphene/SiC buffer layers

X. T. Liu; T. W. Hu; Y. P. Miao; D. Y. Ma; Paul K. Chu; F. Ma; K. W. Xu

doi:10.1063/1.4908013

Selective growth of Pb islands on graphene/SiC buffer layers

X. T. Liu, T. W. Hu, Y. P. Miao, D. Y. Ma, Paul K. Chu, F. Ma^*, K. W. Xu^*

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

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Abstract

Graphene is fabricated by thermal decomposition of silicon carbide (SiC) and Pb islands are deposited by Pb flux in molecular beam epitaxy chamber. It is found that graphene domains and SiC buffer layer coexist. Selective growth of Pb islands on SiC buffer layer rather than on graphene domains is observed. It can be ascribed to the higher adsorption energy of Pb atoms on the 63 reconstruction of SiC. However, once Pb islands nucleate on graphene domains, they will grow very large owing to the lower diffusion barrier of Pb atoms on graphene. The results are consistent with first-principle calculations. Since Pb atoms on graphene are nearly free-standing, Pb islands grow in even-number mode.

Original language	English
Article number	65304
Journal	Journal of Applied Physics
Volume	117
Issue number	6
Online published	10 Feb 2015
DOIs	https://doi.org/10.1063/1.4908013
Publication status	Published - 14 Feb 2015

Publisher's Copyright Statement

COPYRIGHT TERMS OF DEPOSITED FINAL PUBLISHED VERSION FILE: This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in X. T. Liu, T. W. Hu, Y. P. Miao, D. Y. Ma, Paul K. Chu, F. Ma, and K. W. Xu , "Selective growth of Pb islands on graphene/SiC buffer layers", Journal of Applied Physics 117, 065304 (2015) and may be found at https://doi.org/10.1063/1.4908013.

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title = "Selective growth of Pb islands on graphene/SiC buffer layers",

abstract = "Graphene is fabricated by thermal decomposition of silicon carbide (SiC) and Pb islands are deposited by Pb flux in molecular beam epitaxy chamber. It is found that graphene domains and SiC buffer layer coexist. Selective growth of Pb islands on SiC buffer layer rather than on graphene domains is observed. It can be ascribed to the higher adsorption energy of Pb atoms on the 63 reconstruction of SiC. However, once Pb islands nucleate on graphene domains, they will grow very large owing to the lower diffusion barrier of Pb atoms on graphene. The results are consistent with first-principle calculations. Since Pb atoms on graphene are nearly free-standing, Pb islands grow in even-number mode.",

author = "Liu, {X. T.} and Hu, {T. W.} and Miao, {Y. P.} and Ma, {D. Y.} and Chu, {Paul K.} and F. Ma and Xu, {K. W.}",

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T1 - Selective growth of Pb islands on graphene/SiC buffer layers

AU - Liu, X. T.

AU - Hu, T. W.

AU - Miao, Y. P.

AU - Ma, D. Y.

AU - Chu, Paul K.

AU - Ma, F.

AU - Xu, K. W.

PY - 2015/2/14

Y1 - 2015/2/14

N2 - Graphene is fabricated by thermal decomposition of silicon carbide (SiC) and Pb islands are deposited by Pb flux in molecular beam epitaxy chamber. It is found that graphene domains and SiC buffer layer coexist. Selective growth of Pb islands on SiC buffer layer rather than on graphene domains is observed. It can be ascribed to the higher adsorption energy of Pb atoms on the 63 reconstruction of SiC. However, once Pb islands nucleate on graphene domains, they will grow very large owing to the lower diffusion barrier of Pb atoms on graphene. The results are consistent with first-principle calculations. Since Pb atoms on graphene are nearly free-standing, Pb islands grow in even-number mode.

AB - Graphene is fabricated by thermal decomposition of silicon carbide (SiC) and Pb islands are deposited by Pb flux in molecular beam epitaxy chamber. It is found that graphene domains and SiC buffer layer coexist. Selective growth of Pb islands on SiC buffer layer rather than on graphene domains is observed. It can be ascribed to the higher adsorption energy of Pb atoms on the 63 reconstruction of SiC. However, once Pb islands nucleate on graphene domains, they will grow very large owing to the lower diffusion barrier of Pb atoms on graphene. The results are consistent with first-principle calculations. Since Pb atoms on graphene are nearly free-standing, Pb islands grow in even-number mode.

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DO - 10.1063/1.4908013

M3 - RGC 21 - Publication in refereed journal

SN - 0021-8979

VL - 117

JO - Journal of Applied Physics

JF - Journal of Applied Physics

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Selective growth of Pb islands on graphene/SiC buffer layers

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