Selective growth of Pb islands on graphene/SiC buffer layers

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal

8 Scopus Citations
View graph of relations

Author(s)

  • X. T. Liu
  • T. W. Hu
  • D. Y. Ma
  • F. Ma
  • K. W. Xu

Detail(s)

Original languageEnglish
Article number65304
Journal / PublicationJournal of Applied Physics
Volume117
Issue number6
Online published10 Feb 2015
Publication statusPublished - 14 Feb 2015

Abstract

Graphene is fabricated by thermal decomposition of silicon carbide (SiC) and Pb islands are deposited by Pb flux in molecular beam epitaxy chamber. It is found that graphene domains and SiC buffer layer coexist. Selective growth of Pb islands on SiC buffer layer rather than on graphene domains is observed. It can be ascribed to the higher adsorption energy of Pb atoms on the 63 reconstruction of SiC. However, once Pb islands nucleate on graphene domains, they will grow very large owing to the lower diffusion barrier of Pb atoms on graphene. The results are consistent with first-principle calculations. Since Pb atoms on graphene are nearly free-standing, Pb islands grow in even-number mode.

Citation Format(s)

Selective growth of Pb islands on graphene/SiC buffer layers. / Liu, X. T.; Hu, T. W.; Miao, Y. P.; Ma, D. Y.; Chu, Paul K.; Ma, F.; Xu, K. W.

In: Journal of Applied Physics, Vol. 117, No. 6, 65304, 14.02.2015.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal