TY - JOUR
T1 - Selective growth of metal-rich silicide of near-noble metals
AU - Tu, K. N.
N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].
PY - 1975
Y1 - 1975
N2 - Near-noble metals react with Si to form a metal-rich silicide at 100 to 200°C. Growth of the silicide is selected by the criterion that diffusion of near-noble metal atoms to the silicide-silicon interface is needed in order to maintain a high interface mobility. Structure of the metal-rich silicide facilitates the diffusion. It has been postulated that high interface mobility can be achieved by transforming Si atoms at the interface from covalent bonding to metallic bonding and the transformation can be induced by forming metal interstitials in Si.
AB - Near-noble metals react with Si to form a metal-rich silicide at 100 to 200°C. Growth of the silicide is selected by the criterion that diffusion of near-noble metal atoms to the silicide-silicon interface is needed in order to maintain a high interface mobility. Structure of the metal-rich silicide facilitates the diffusion. It has been postulated that high interface mobility can be achieved by transforming Si atoms at the interface from covalent bonding to metallic bonding and the transformation can be induced by forming metal interstitials in Si.
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U2 - 10.1063/1.88436
DO - 10.1063/1.88436
M3 - RGC 21 - Publication in refereed journal
SN - 0003-6951
VL - 27
SP - 221
EP - 224
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 4
ER -