Abstract
Near-noble metals react with Si to form a metal-rich silicide at 100 to 200°C. Growth of the silicide is selected by the criterion that diffusion of near-noble metal atoms to the silicide-silicon interface is needed in order to maintain a high interface mobility. Structure of the metal-rich silicide facilitates the diffusion. It has been postulated that high interface mobility can be achieved by transforming Si atoms at the interface from covalent bonding to metallic bonding and the transformation can be induced by forming metal interstitials in Si.
| Original language | English |
|---|---|
| Pages (from-to) | 221-224 |
| Journal | Applied Physics Letters |
| Volume | 27 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 1975 |
| Externally published | Yes |
Bibliographical note
Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].Fingerprint
Dive into the research topics of 'Selective growth of metal-rich silicide of near-noble metals'. Together they form a unique fingerprint.Cite this
- APA
- Author
- BIBTEX
- Harvard
- Standard
- RIS
- Vancouver