Selective epitaxial silicon growth in high aspect ratio contact on 70 nm node flash memory

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal

1 Scopus Citations
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Author(s)

  • Ching-Yuan Ho
  • Jr-Hau He
  • Yuan-Pul Chang
  • Chenhsin Lien

Detail(s)

Original languageEnglish
Pages (from-to)6850-6852
Journal / PublicationThin Solid Films
Volume517
Issue number24
Online published8 Jun 2009
Publication statusPublished - 30 Oct 2009
Externally publishedYes

Abstract

Selective epitaxial growth (SEG) silicon as sacrificial layer is proposed to circumvent junction leakage (Ijun) of bit line contact due to silicon substrate loss by high aspect ratio contact etching and spontaneous salicide formation. The result indicates that the appropriate SEG silicon in contact area significantly reduces Ijun about three orders compared with no SEG silicon. In addition, the SEG method provides acceptable Kelvin contact resistance. Furthermore, during salicide formation, the consumed ratio of titanium to silicon is 0.7. It is confirmed that the feasible approach not only prevents from Ijun deterioration but also adjusts contact resistance as well. reserved.

Research Area(s)

  • High aspect ratio contact, Junction leakage, Kelvin contact resistance, Selective epitaxial growth, Spontaneous salicide

Citation Format(s)

Selective epitaxial silicon growth in high aspect ratio contact on 70 nm node flash memory. / Ho, Ching-Yuan; He, Jr-Hau; Chang, Yuan-Pul; Lien, Chenhsin.

In: Thin Solid Films, Vol. 517, No. 24, 30.10.2009, p. 6850-6852.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal