Abstract
We report a controllable wet method for effective decoration of 2-dimensional (2D) molybdenum disulfide (MoS 2) layers with Au nanoparticles (NPs). Au NPs can be selectively formed on the edge sites or defective sites of MoS 2 layers. The Au-MoS 2 nano-composites are formed by non-covalent bond. The size distribution, morphology and density of the metal nanoparticles can be tuned by changing the defect density in MoS 2 layers. Field effect transistors were directly fabricated by placing ion gel gate dielectrics on Au-decorated MoS 2 layers without the need to transfer these MoS 2 layers to SiO 2 /Si substrates for bottom gate devices. The ion gel method allows probing the intrinsic electrical properties of the as-grown and Au-decorated MoS 2 layers. This study shows that Au NPs impose remarkable p-doping effects to the MoS 2 transistors without degrading their electrical characteristics.
| Original language | English |
|---|---|
| Article number | 1839 |
| Journal | Scientific Reports |
| Volume | 3 |
| DOIs | |
| Publication status | Published - 2013 |
| Externally published | Yes |
Bibliographical note
Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].Funding
This work is supported by SUTD-MIT international design center fund to Dr Yang Hui Ying. L.J. Li thanks the support from Academia Sinica (IAMS and Nano program) and National Science Council Taiwan (NSC-99-2112-M-001-021-MY3). S.F. Yu and L.M. Jin thank PolyU grant (Grant No. G-YJ73).
Publisher's Copyright Statement
- This full text is made available under CC-BY 4.0. https://creativecommons.org/licenses/by/4.0/
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