Selective-area growth of gallium oxide nanowires: Synthesis, characterization, and device application

K. C. Lo; H. Wang; H. P. Ho; P. K. Chu

doi:10.1109/EDSSC.2007.4450337

Selective-area growth of gallium oxide nanowires: Synthesis, characterization, and device application

K. C. Lo, H. Wang, H. P. Ho, P. K. Chu

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

1 Citation (Scopus)

Abstract

In this paper, we report the selective area synthesis of gallium oxide (Ga₂O₃) nano-wires on gold patterned gallium arsenide (GaAs) substrate which have been treated by ion implantation. The GaAs substrate was first treated with implantation of acetylene (C₂H₂) ions, and then followed by coating the surface with a 2nm thick gold film. After rapid thermal anneal (RTA) at 950°C for 15 seconds, Ga₂O ₃ nano-wires were found on gold patterned surface. The Ga ₂O₃ nano-wires with diameters of 50-500nm were examined by Raman spectroscopy, scanning electron microscopy (SEM), and cathodoluminescence (CL). We also measured the I-V behavior for Ga₂O₃ material under the excitation by various laser radiations, hence demonstrating its potential applications as UV sensors. In addition, nano-particles of gold were found at the tip of the nano-wires, suggesting that a vapor-liquid-solid (VLS) mechanism was involved. © 2007 IEEE.

Original language	English
Title of host publication	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
Pages	1171-1174
DOIs	https://doi.org/10.1109/EDSSC.2007.4450337
Publication status	Published - 2007
Event	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 - Tainan, Taiwan, China Duration: 20 Dec 2007 → 22 Dec 2007

Conference

Conference	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
Place	Taiwan, China
City	Tainan
Period	20/12/07 → 22/12/07

Access Output

10.1109/EDSSC.2007.4450337

Other Access Options

Check CityUHK Library

Permanent Link

Right click to copy link

Cite this

@inproceedings{c6524c25ca7e43ae9d83237e48bb72af,

title = "Selective-area growth of gallium oxide nanowires: Synthesis, characterization, and device application",

abstract = "In this paper, we report the selective area synthesis of gallium oxide (Ga2O3) nano-wires on gold patterned gallium arsenide (GaAs) substrate which have been treated by ion implantation. The GaAs substrate was first treated with implantation of acetylene (C2H2) ions, and then followed by coating the surface with a 2nm thick gold film. After rapid thermal anneal (RTA) at 950°C for 15 seconds, Ga2O 3 nano-wires were found on gold patterned surface. The Ga 2O3 nano-wires with diameters of 50-500nm were examined by Raman spectroscopy, scanning electron microscopy (SEM), and cathodoluminescence (CL). We also measured the I-V behavior for Ga2O3 material under the excitation by various laser radiations, hence demonstrating its potential applications as UV sensors. In addition, nano-particles of gold were found at the tip of the nano-wires, suggesting that a vapor-liquid-solid (VLS) mechanism was involved. {\textcopyright} 2007 IEEE.",

author = "Lo, {K. C.} and H. Wang and Ho, {H. P.} and Chu, {P. K.}",

year = "2007",

doi = "10.1109/EDSSC.2007.4450337",

language = "English",

isbn = "1424406374",

pages = "1171--1174",

booktitle = "IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007",

note = "IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 ; Conference date: 20-12-2007 Through 22-12-2007",

}

Lo, KC, Wang, H, Ho, HP & Chu, PK 2007, Selective-area growth of gallium oxide nanowires: Synthesis, characterization, and device application. in IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007., 4450337, pp. 1171-1174, IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007, Tainan, Taiwan, China, 20/12/07. https://doi.org/10.1109/EDSSC.2007.4450337

Selective-area growth of gallium oxide nanowires: Synthesis, characterization, and device application. / Lo, K. C.; Wang, H.; Ho, H. P. et al.
IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007. 2007. p. 1171-1174 4450337.

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

TY - GEN

T1 - Selective-area growth of gallium oxide nanowires

T2 - IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

AU - Lo, K. C.

AU - Wang, H.

AU - Ho, H. P.

AU - Chu, P. K.

PY - 2007

Y1 - 2007

N2 - In this paper, we report the selective area synthesis of gallium oxide (Ga2O3) nano-wires on gold patterned gallium arsenide (GaAs) substrate which have been treated by ion implantation. The GaAs substrate was first treated with implantation of acetylene (C2H2) ions, and then followed by coating the surface with a 2nm thick gold film. After rapid thermal anneal (RTA) at 950°C for 15 seconds, Ga2O 3 nano-wires were found on gold patterned surface. The Ga 2O3 nano-wires with diameters of 50-500nm were examined by Raman spectroscopy, scanning electron microscopy (SEM), and cathodoluminescence (CL). We also measured the I-V behavior for Ga2O3 material under the excitation by various laser radiations, hence demonstrating its potential applications as UV sensors. In addition, nano-particles of gold were found at the tip of the nano-wires, suggesting that a vapor-liquid-solid (VLS) mechanism was involved. © 2007 IEEE.

AB - In this paper, we report the selective area synthesis of gallium oxide (Ga2O3) nano-wires on gold patterned gallium arsenide (GaAs) substrate which have been treated by ion implantation. The GaAs substrate was first treated with implantation of acetylene (C2H2) ions, and then followed by coating the surface with a 2nm thick gold film. After rapid thermal anneal (RTA) at 950°C for 15 seconds, Ga2O 3 nano-wires were found on gold patterned surface. The Ga 2O3 nano-wires with diameters of 50-500nm were examined by Raman spectroscopy, scanning electron microscopy (SEM), and cathodoluminescence (CL). We also measured the I-V behavior for Ga2O3 material under the excitation by various laser radiations, hence demonstrating its potential applications as UV sensors. In addition, nano-particles of gold were found at the tip of the nano-wires, suggesting that a vapor-liquid-solid (VLS) mechanism was involved. © 2007 IEEE.

UR - http://www.scopus.com/inward/record.url?scp=43049156120&partnerID=8YFLogxK

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-43049156120&origin=recordpage

U2 - 10.1109/EDSSC.2007.4450337

DO - 10.1109/EDSSC.2007.4450337

M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 1424406374

SN - 9781424406371

SP - 1171

EP - 1174

BT - IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

Y2 - 20 December 2007 through 22 December 2007

ER -

Selective-area growth of gallium oxide nanowires: Synthesis, characterization, and device application

Abstract

Conference

Access Output

Other Access Options

Permanent Link

Other Files and Links

Fingerprint

Cite this