SECONDARY ION MASS SPECTROMETRIC IMAGE DEPTH PROFILE ANALYSIS OF THIN LAYERS.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

Detail(s)

Original languageEnglish
Pages (from-to)2208-2210
Journal / PublicationANAL CHEM
VolumeV 54
Issue numberN 13
Publication statusPublished - Nov 1982
Externally publishedYes

Abstract

IMAGE DEPTH PROFILING IS APPLIED TO THE QUANTITATIVE ANALYSIS OF MOLECULAR BEAM EPITAXIALLY GROWN GALLIUM ARSENIDE THINLAYERS. THE TECHNIQUE INVOLVES THE USE OF ION IMPLANTATION THROUGH A MASK AND SUBSEQUENT ANALYSIS BY SECONDARY ION MASSSPECTROMETRY (SIMS). THE PROPOSED APPROACH PROVIDES HIGH ACCURACY REULTS IN THE ANALYSIS OF SEMICONDUCTOR THIN LAYERS.

Citation Format(s)

SECONDARY ION MASS SPECTROMETRIC IMAGE DEPTH PROFILE ANALYSIS OF THIN LAYERS. / CHU, PAUL K.; HARRIS, WILLIAM C.; MORRISON, GEORGE H.

In: ANAL CHEM, Vol. V 54, No. N 13, 11.1982, p. 2208-2210.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review