Scrubbing-Aware Secure Deletion for 3-D NAND Flash

Wei-Chen Wang*, Chien-Chung Ho, Yuan-Hao Chang, Tei-Wei Kuo, Ping-Hsien Lin

*Corresponding author for this work

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

28 Citations (Scopus)

Abstract

Due to the increasing security concerns, the conventional deletion operations in NAND flash memory can no longer afford the requirement of secure deletion. Although existing works exploit secure deletion and scrubbing operations to achieve the security requirement, they also result in performance and disturbance problems. The predicament becomes more severe as the growing of page numbers caused by the aggressive use of 3-D NAND flash-memory chips which stack flash cells into multiple layers in a chip. Different from existing works, this paper aims at exploring a scrubbing-aware secure deletion design so as to improve the efficiency of secure deletion by exploiting properties of disturbance. The proposed design could minimize secure deletion/scrubbing overheads by organizing sensitive data to create the scrubbing-friendly patterns, and further choose a proper operation by the proposed evaluation equations for each secure deletion command. The capability of our proposed design is evaluated by a series of experiments, for which we have very encouraging results. In a 128 Gbits 3-D NAND flash-memory device, the simulation results show that the proposed design could achieve 82% average response time reduction of each secure deletion command.
Original languageEnglish
Article number8412557
Pages (from-to)2790-2801
JournalIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
Volume37
Issue number11
Online published18 Jul 2018
DOIs
Publication statusPublished - Nov 2018
Externally publishedYes

Research Keywords

  • 3-D NAND flash
  • nonvolatile memory
  • scrubbing
  • secure deletion

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