Schottky barrier of nonuniform contacts to n-type and p-type silicon
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
Author(s)
Detail(s)
| Original language | English |
|---|---|
| Pages (from-to) | 4285-4288 |
| Journal / Publication | Journal of Applied Physics |
| Volume | 53 |
| Issue number | 6 |
| Publication status | Published - 1982 |
| Externally published | Yes |
Link(s)
Abstract
A current-voltage measurement and thermionic emission theory have been applied to discrete parallel diodes (nonuniform diodes) with the unusual result that the sum of the apparent Schottky barriers to n Si and p Si is not equal to the band gap of Si.
Bibliographic Note
Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to lbscholars@cityu.edu.hk.
Citation Format(s)
Schottky barrier of nonuniform contacts to n-type and p-type silicon. / Thompson, R. D.; Tu, K. N.
In: Journal of Applied Physics, Vol. 53, No. 6, 1982, p. 4285-4288.
In: Journal of Applied Physics, Vol. 53, No. 6, 1982, p. 4285-4288.
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
