Schottky barrier of nonuniform contacts to n-type and p-type silicon

R. D. Thompson; K. N. Tu

doi:10.1063/1.331257

Schottky barrier of nonuniform contacts to n-type and p-type silicon

R. D. Thompson
, K. N. Tu

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

23 Citations (Scopus)

Abstract

A current-voltage measurement and thermionic emission theory have been applied to discrete parallel diodes (nonuniform diodes) with the unusual result that the sum of the apparent Schottky barriers to n Si and p Si is not equal to the band gap of Si.

Original language	English
Pages (from-to)	4285-4288
Journal	Journal of Applied Physics
Volume	53
Issue number	6
DOIs	https://doi.org/10.1063/1.331257
Publication status	Published - 1982
Externally published	Yes

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Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

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abstract = "A current-voltage measurement and thermionic emission theory have been applied to discrete parallel diodes (nonuniform diodes) with the unusual result that the sum of the apparent Schottky barriers to n Si and p Si is not equal to the band gap of Si.",

author = "Thompson, \{R. D.\} and Tu, \{K. N.\}",

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AU - Tu, K. N.

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PY - 1982

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AB - A current-voltage measurement and thermionic emission theory have been applied to discrete parallel diodes (nonuniform diodes) with the unusual result that the sum of the apparent Schottky barriers to n Si and p Si is not equal to the band gap of Si.

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U2 - 10.1063/1.331257

DO - 10.1063/1.331257

M3 - RGC 21 - Publication in refereed journal

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EP - 4288

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 6

ER -

Schottky barrier of nonuniform contacts to n-type and p-type silicon

Abstract

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