TY - JOUR
T1 - Schottky-barrier height of iridium silicide
AU - Ohdomari, I.
AU - Tu, K. N.
AU - D'Heurle, F. M.
AU - Kuan, T. S.
AU - Petersson, S.
N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].
PY - 1978
Y1 - 1978
N2 - Iridium silicides have been prepared by annealing Ir films on (100) - and (111) -oriented Si from 300 to 500°C. Phase identification was performed by both x-ray and electron diffractions, and Schottky-barrier height by current-voltage measurements. The silicide IrSi has been found to have a barrier height of 0.93 eV, which is the highest among all the silicides measured. The high value leads us to conclude that the silicide does not follow the linear relation which exists between barrier height and heat of formation of most other silicides.
AB - Iridium silicides have been prepared by annealing Ir films on (100) - and (111) -oriented Si from 300 to 500°C. Phase identification was performed by both x-ray and electron diffractions, and Schottky-barrier height by current-voltage measurements. The silicide IrSi has been found to have a barrier height of 0.93 eV, which is the highest among all the silicides measured. The high value leads us to conclude that the silicide does not follow the linear relation which exists between barrier height and heat of formation of most other silicides.
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U2 - 10.1063/1.90256
DO - 10.1063/1.90256
M3 - RGC 21 - Publication in refereed journal
SN - 0003-6951
VL - 33
SP - 1028
EP - 1030
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 12
ER -