Salt-Induced High-Density Vacancy-Rich 2D MoS2 for Efficient Hydrogen Evolution
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
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Detail(s)
Original language | English |
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Article number | 2304808 |
Journal / Publication | Advanced Materials |
Volume | 36 |
Issue number | 17 |
Online published | 27 Jul 2023 |
Publication status | Published - 25 Apr 2024 |
Link(s)
Abstract
Emerging non-noble metal 2D catalysts, such as molybdenum disulfide (MoS2), hold great promise in hydrogen evolution reactions. The sulfur vacancy is recognized as a key defect type that can activate the inert basal plane to improve the catalytic performance. Unfortunately, the method of introducing sulfur vacancies is limited and requires costly post-treatment processes. Here, a novel salt-assisted chemical vapor deposition (CVD) method is demonstrated for synthesizing ultrahigh-density vacancy-rich 2H-MoS2, with a controllable sulfur vacancy density of up to 3.35 × 1014 cm−2. This approach involves a pre-sprayed potassium chloridepromoter on the growth substrate. The generation of such defects is closely related to ion adsorption in the growth process, the unstable MoS2-K-H2O triggers the formation of sulfur vacancies during the subsequent transfer process, and it is more controllable and nondestructive when compared to traditional post-treatment methods. The vacancy-rich monolayer MoS2 exhibits exceptional catalytic activity based on the microcell measurements, with an overpotential of ≈158.8 mV (100 mA cm−2) and a Tafel slope of 54.3 mV dec−1 in 0.5 m H2SO4 electrolyte. These results indicate a promising opportunity for modulating sulfur vacancy defects in MoS2 using salt-assisted CVD growth. This approach represents a significant leap toward achieving better control over the catalytic performances of 2D materials. © 2023 Wiley-VCH GmbH.
Research Area(s)
- 2D MoS2, chemical vapor deposition, hydrogen evolution reactions, salt-assisted, sulfur vacancies
Citation Format(s)
Salt-Induced High-Density Vacancy-Rich 2D MoS2 for Efficient Hydrogen Evolution. / Man, Ping; Jiang, Shan; Leung, Ka Ho et al.
In: Advanced Materials, Vol. 36, No. 17, 2304808, 25.04.2024.
In: Advanced Materials, Vol. 36, No. 17, 2304808, 25.04.2024.
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review