Root-of-area formula of electrical capacitance, for equivalent circuit of thermal conduction, from an HBT-IC through a GaAs substrate with temperature dependent conductivity

Research output: Chapters, Conference Papers, Creative and Literary WorksRGC 32 - Refereed conference paper (with host publication)peer-review

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Detail(s)

Original languageEnglish
Title of host publicationAntem/URSI 2004 - 10th International Symposium on Antenna Technology and Applied Electromagnetics and URSI Conference, Proceedings
PublisherInstitute of Electrical and Electronics Engineers, Inc.
ISBN (print)9780969256397
Publication statusPublished - 21 Feb 2017

Conference

Title10th International Symposium on Antenna Technology and Applied Electromagnetics and URSI Conference, Antem/URSI 2004
PlaceCanada
CityOttawa
Period20 - 23 July 2004

Abstract

Like the field computation of capacitance, thermal resistance from an ICs is normally done by simulating over a very large region of the device and substrate, in 3D and with very fine meshing. This is especially necessary in a temperature dependent substrate such as GaAs [1]. Through the root-of-area capacitance formula of the electrical equivalent, this paper shows that the tedious 3D fine meshing may be replaced by a simple equivalent circuit.

Citation Format(s)

Root-of-area formula of electrical capacitance, for equivalent circuit of thermal conduction, from an HBT-IC through a GaAs substrate with temperature dependent conductivity. / Chow, Y. L.; Tsang, K. F.; Ping, S. W.
Antem/URSI 2004 - 10th International Symposium on Antenna Technology and Applied Electromagnetics and URSI Conference, Proceedings. Institute of Electrical and Electronics Engineers, Inc., 2017. 7860590.

Research output: Chapters, Conference Papers, Creative and Literary WorksRGC 32 - Refereed conference paper (with host publication)peer-review