Root-of-area formula of electrical capacitance, for equivalent circuit of thermal conduction, from an HBT-IC through a GaAs substrate with temperature dependent conductivity

Y. L. Chow; K. F. Tsang; S. W. Ping

doi:10.1109/ANTEM.2004.7860590

Root-of-area formula of electrical capacitance, for equivalent circuit of thermal conduction, from an HBT-IC through a GaAs substrate with temperature dependent conductivity

Y. L. Chow, K. F. Tsang, S. W. Ping

City University of Hong Kong

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

Abstract

Like the field computation of capacitance, thermal resistance from an ICs is normally done by simulating over a very large region of the device and substrate, in 3D and with very fine meshing. This is especially necessary in a temperature dependent substrate such as GaAs [1]. Through the root-of-area capacitance formula of the electrical equivalent, this paper shows that the tedious 3D fine meshing may be replaced by a simple equivalent circuit.

Original language	English
Title of host publication	Antem/URSI 2004 - 10th International Symposium on Antenna Technology and Applied Electromagnetics and URSI Conference, Proceedings
Publisher	IEEE
ISBN (Print)	9780969256397
DOIs	https://doi.org/10.1109/ANTEM.2004.7860590
Publication status	Published - 21 Feb 2017
Event	10th International Symposium on Antenna Technology and Applied Electromagnetics and URSI Conference, Antem/URSI 2004 - Ottawa, Canada Duration: 20 Jul 2004 → 23 Jul 2004

Conference

Conference	10th International Symposium on Antenna Technology and Applied Electromagnetics and URSI Conference, Antem/URSI 2004
Place	Canada
City	Ottawa
Period	20/07/04 → 23/07/04

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Chow, Y. L., Tsang, K. F., & Ping, S. W. (2017). Root-of-area formula of electrical capacitance, for equivalent circuit of thermal conduction, from an HBT-IC through a GaAs substrate with temperature dependent conductivity. In Antem/URSI 2004 - 10th International Symposium on Antenna Technology and Applied Electromagnetics and URSI Conference, Proceedings Article 7860590 IEEE. https://doi.org/10.1109/ANTEM.2004.7860590

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title = "Root-of-area formula of electrical capacitance, for equivalent circuit of thermal conduction, from an HBT-IC through a GaAs substrate with temperature dependent conductivity",

abstract = "Like the field computation of capacitance, thermal resistance from an ICs is normally done by simulating over a very large region of the device and substrate, in 3D and with very fine meshing. This is especially necessary in a temperature dependent substrate such as GaAs [1]. Through the root-of-area capacitance formula of the electrical equivalent, this paper shows that the tedious 3D fine meshing may be replaced by a simple equivalent circuit.",

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Chow, YL, Tsang, KF & Ping, SW 2017, Root-of-area formula of electrical capacitance, for equivalent circuit of thermal conduction, from an HBT-IC through a GaAs substrate with temperature dependent conductivity. in Antem/URSI 2004 - 10th International Symposium on Antenna Technology and Applied Electromagnetics and URSI Conference, Proceedings., 7860590, IEEE, 10th International Symposium on Antenna Technology and Applied Electromagnetics and URSI Conference, Antem/URSI 2004, Ottawa, Canada, 20/07/04. https://doi.org/10.1109/ANTEM.2004.7860590

Root-of-area formula of electrical capacitance, for equivalent circuit of thermal conduction, from an HBT-IC through a GaAs substrate with temperature dependent conductivity. / Chow, Y. L.; Tsang, K. F.; Ping, S. W.
Antem/URSI 2004 - 10th International Symposium on Antenna Technology and Applied Electromagnetics and URSI Conference, Proceedings. IEEE, 2017. 7860590.

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

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T1 - Root-of-area formula of electrical capacitance, for equivalent circuit of thermal conduction, from an HBT-IC through a GaAs substrate with temperature dependent conductivity

AU - Chow, Y. L.

AU - Tsang, K. F.

AU - Ping, S. W.

PY - 2017/2/21

Y1 - 2017/2/21

N2 - Like the field computation of capacitance, thermal resistance from an ICs is normally done by simulating over a very large region of the device and substrate, in 3D and with very fine meshing. This is especially necessary in a temperature dependent substrate such as GaAs [1]. Through the root-of-area capacitance formula of the electrical equivalent, this paper shows that the tedious 3D fine meshing may be replaced by a simple equivalent circuit.

AB - Like the field computation of capacitance, thermal resistance from an ICs is normally done by simulating over a very large region of the device and substrate, in 3D and with very fine meshing. This is especially necessary in a temperature dependent substrate such as GaAs [1]. Through the root-of-area capacitance formula of the electrical equivalent, this paper shows that the tedious 3D fine meshing may be replaced by a simple equivalent circuit.

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DO - 10.1109/ANTEM.2004.7860590

M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 9780969256397

BT - Antem/URSI 2004 - 10th International Symposium on Antenna Technology and Applied Electromagnetics and URSI Conference, Proceedings

PB - IEEE

T2 - 10th International Symposium on Antenna Technology and Applied Electromagnetics and URSI Conference, Antem/URSI 2004

Y2 - 20 July 2004 through 23 July 2004

ER -

Chow YL, Tsang KF, Ping SW. Root-of-area formula of electrical capacitance, for equivalent circuit of thermal conduction, from an HBT-IC through a GaAs substrate with temperature dependent conductivity. In Antem/URSI 2004 - 10th International Symposium on Antenna Technology and Applied Electromagnetics and URSI Conference, Proceedings. IEEE. 2017. 7860590 doi: 10.1109/ANTEM.2004.7860590

Root-of-area formula of electrical capacitance, for equivalent circuit of thermal conduction, from an HBT-IC through a GaAs substrate with temperature dependent conductivity

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