Room-Temperature Ferroelectricity in Hexagonally Layered α-In2Se3 Nanoflakes down to the Monolayer Limit

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalNot applicablepeer-review

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Author(s)

  • Fei Xue
  • Weijin Hu
  • Ko-Chun Lee
  • Li-Syuan Lu
  • Junwei Zhang
  • Hao-Ling Tang
  • Ali Han
  • Wei-Ting Hsu
  • Shaobo Tu
  • Wen-Hao Chang
  • Chen-Hsin Lien
  • Zhidong Zhang
  • Lain-Jong Li
  • Xixiang Zhang

Detail(s)

Original languageEnglish
Article number1803738
Journal / PublicationAdvanced Functional Materials
Volume28
Issue number50
Early online date21 Oct 2018
Publication statusPublished - 12 Dec 2018
Externally publishedYes

Abstract

2D ferroelectric material has emerged as an attractive building block for high-density data storage nanodevices. Although monolayer van der Waals ferroelectrics have been theoretically predicted, a key experimental breakthrough for such calculations is still not realized. Here, hexagonally stacking α-In2Se3 nanoflake, a rarely studied van der Waals polymorph, is reported to exhibit out-of-plane (OOP) and in-plane (IP) ferroelectricity at room temperature. Ferroelectric multidomain states in a hexagonal α-In 2 Se 3 nanoflake with uniform thickness can survive to 6 nm. Most strikingly, the electric-field-induced polarization switching and hysteresis loop are, respectively, observed down to the bilayer and monolayer (≈1.2 nm) thicknesses, which designates it as the thinnest layered ferroelectric and verifies the corresponding theoretical calculation. In addition, two types of ferroelectric nanodevices employing the OOP and IP polarizations in 2H α-In2Se3 are developed, which are applicable for nonvolatile memories and heterostructure-based nanoelectronics/optoelectronics.

Research Area(s)

  • hexagonal α-In 2 Se 3, layered 2D materials, monolayer, room-temperature ferroelectricity

Citation Format(s)

Room-Temperature Ferroelectricity in Hexagonally Layered α-In2Se3 Nanoflakes down to the Monolayer Limit. / Xue, Fei; Hu, Weijin; Lee, Ko-Chun; Lu, Li-Syuan; Zhang, Junwei; Tang, Hao-Ling; Han, Ali; Hsu, Wei-Ting; Tu, Shaobo; Chang, Wen-Hao; Lien, Chen-Hsin; He, Jr-Hau; Zhang, Zhidong; Li, Lain-Jong; Zhang, Xixiang.

In: Advanced Functional Materials, Vol. 28, No. 50, 1803738, 12.12.2018.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalNot applicablepeer-review