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Role of oxygen pressure during pulsed laser deposition on the electrical and dielectric properties of antiferroelectric lanthanum-doped lead zirconate stannate titanate thin films

  • Yingbang Yao
  • , S. G. Lu
  • , Haydn Chen
  • , Jiwei Zhai
  • , K. H. Wong

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

Abstract

The role of oxygen pressure during the pulsed laser deposition of lead zirconate stannate titanates (PLZST) thin films was discussed. It was found that the oxygen pressure was in the range of 100-125 mTorr. The roughness of the films increases with increasing oxygen pressure. During deposition, fatigue and leakage current were also found to decrease with the oxygen pressure. The results show that for the samples deposited under higher oxygen pressure, there exist low-frequency dielectric dispersion process.
© 2004 American Institute of Physics
Original languageEnglish
Pages (from-to)569-574
JournalJournal of Applied Physics
Volume96
Issue number1
DOIs
Publication statusPublished - 1 Jul 2004

Bibliographical note

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Funding

This work was supported in full by a HK RGC grant (Grant No. CityU 1049/02E) via the City University of Hong Kong (CityU). The authors would like to acknowledge the technical assistance from T. F. Hong and Daniel Yau of CityU.

RGC Funding Information

  • RGC-funded

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