Role of hydrogen in doping mechanism for a-Si : H alloys
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
Author(s)
Detail(s)
| Original language | English |
|---|---|
| Pages (from-to) | 1625-1627 |
| Journal / Publication | Solid State Communications |
| Volume | 65 |
| Issue number | 12 |
| Publication status | Published - Mar 1988 |
| Externally published | Yes |
Link(s)
Abstract
Calculations of electronic energies for structural clusters simulating phosphorus and boron substitutional doped and undoped pure and hydrogenated silicon have been performed using CNDO/2 quantum chemical molecular orbital method, respectively. The results show that more energies for implanting impurities are required in hydrogenated Si cluster than that in pure Si cluster, and a band of shallow gap states is induced by the substitutional doping in the hydrogenated system. From the results it is concluded that the hydrogenation is a key factor of efficient substitutional doping in the a-Si:H alloys. © 1988.
Citation Format(s)
Role of hydrogen in doping mechanism for a-Si : H alloys. / Rui-qin Zhang, Ruiqin; Guo-cai Dai, [Unknown]; Zheng-ting Cai, [Unknown] et al.
In: Solid State Communications, Vol. 65, No. 12, 03.1988, p. 1625-1627.Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
