Robust entangling gate for capacitively coupled few-electron singlet-triplet qubits
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
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Original language | English |
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Article number | 075417 |
Journal / Publication | Physical Review B |
Volume | 106 |
Issue number | 7 |
Publication status | Published - 15 Aug 2022 |
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DOI | DOI |
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Link to Scopus | https://www.scopus.com/record/display.uri?eid=2-s2.0-85137731514&origin=recordpage |
Permanent Link | https://scholars.cityu.edu.hk/en/publications/publication(cdd94b35-1b23-490c-97e7-41dc0ea2bff4).html |
Abstract
The search for a sweet spot, the locus in qubit parameters where quantum control is first-order insensitive to noises, is key to achieve high-fidelity quantum gates. Efforts to search for such a sweet spot in conventional double-quantum-dot singlet-triplet qubits where each dot hosts one electron ("two-electron singlet-triplet qubit"), especially for two-qubit operations, have been unsuccessful. Here we consider singlet-triplet qubits allowing each dot to host more than one electron, with a total of four electrons in the double quantum dots ("four-electron singlet-triplet qubit"). We theoretically demonstrate, using configuration interaction calculations, that sweet spots appear in this coupled qubit system. We further demonstrate that, under realistic charge noise and hyperfine noise, a two-qubit operation at the proposed sweet spot could offer gate fidelities (∼99%) that are higher than the conventional two-electron singlet-triplet qubit system (∼90%). Our results should facilitate realization of high-fidelity two-qubit gates in singlet-triplet qubit systems.
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Robust entangling gate for capacitively coupled few-electron singlet-triplet qubits. / Chan, Guo Xuan; Wang, Xin.
In: Physical Review B, Vol. 106, No. 7, 075417, 15.08.2022.
In: Physical Review B, Vol. 106, No. 7, 075417, 15.08.2022.
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
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