Revolutionizing Photolithography: High-Power AlGaN Deep-UV microLED Displays for Maskless Pattern Transfer in Semiconductor Fabrication

The development of aluminum gallium nitride (AlGaN) deep ultraviolet (DUV) micro-light-emitting diodes (microLEDs) has faced significant challenges, particularly in achieving the power levels necessary for diverse applications. Recent advancements in fabrication techniques have led to the successful demonstration of highly efficient 270 nm DUV microLEDs scaling down to 3 μm and large-format DUV display arrays, both of which are poised to transform maskless photolithography. This research presents the development of a high-power, high-luminance, high-resolution, and high-pixel-density DUV microLED display array chip with low power consumption. Building on this innovative display technology, we introduced and successfully implemented a novel maskless lithography technique utilizing DUV microLEDs, culminating in the establishment of a prototype platform for maskless lithography. For the first time, a microLED device is fabricated by exposure to DUV displayed patterns without using a traditional mask. By integrating the ultraviolet light source with the patterning function typically performed by masks in conventional lithography systems, this approach delivers an adequate exposure dose to the photoresist in a significantly reduced timeframe. This work not only demonstrates the feasibility of maskless lithography but also holds the potential to drive revolutionary advancements in the semiconductor manufacturing industry. © 2025, John Wiley and Sons Inc. All rights reserved.