Retention trimming for wear reduction of flash memory storage systems

Liang Shi; Kaijie Wu; Mengying Zhao; Chun Jason Xue; Edwin H.-M. Sha

doi:10.1145/2593069.2593203

Retention trimming for wear reduction of flash memory storage systems

Liang Shi, Kaijie Wu, Mengying Zhao, Chun Jason Xue, Edwin H.-M. Sha

Department of Computer Science

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

15 Citations (Scopus)

Abstract

NAND flash memory has been widely applied in embedded systems, personal computer systems, and data centers. However, with the development of flash memory, including its technology scaling and density improvement, the endurance of flash memory becomes a bottleneck. In this work, with the understanding of the relationship between data retention time and flash wearing, a retention trimming approach, which trims data retention time based on the time intervals between data updating, is proposed to reduce the wearing of flash memory. Reduced wearing of flash memory will improve the endurance of the flash memory. Extensive experimental results show that the proposed technique achieves significant wearing reduction for flash memory through retention trimming. Copyright 2014 ACM.

Original language	English
Title of host publication	Proceedings - Design Automation Conference
Publisher	IEEE
ISBN (Print)	9781479930173
DOIs	https://doi.org/10.1145/2593069.2593203
Publication status	Published - 2014
Event	51st Design Automation Conference (DAC 2014) - Moscone Center, San Francisco, United States Duration: 1 Jun 2014 → 5 Jun 2014 https://www.dac.com/content/51st-dac-0

Publication series

Name
ISSN (Print)	0738-100X

Conference

Conference	51st Design Automation Conference (DAC 2014)
Abbreviated title	DAC'14
Place	United States
City	San Francisco
Period	1/06/14 → 5/06/14
Internet address	https://www.dac.com/content/51st-dac-0

Research Keywords

Flash Memory
Retention Time
Wear Reduction

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10.1145/2593069.2593203

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title = "Retention trimming for wear reduction of flash memory storage systems",

abstract = "NAND flash memory has been widely applied in embedded systems, personal computer systems, and data centers. However, with the development of flash memory, including its technology scaling and density improvement, the endurance of flash memory becomes a bottleneck. In this work, with the understanding of the relationship between data retention time and flash wearing, a retention trimming approach, which trims data retention time based on the time intervals between data updating, is proposed to reduce the wearing of flash memory. Reduced wearing of flash memory will improve the endurance of the flash memory. Extensive experimental results show that the proposed technique achieves significant wearing reduction for flash memory through retention trimming. Copyright 2014 ACM.",

keywords = "Flash Memory, Retention Time, Wear Reduction",

author = "Liang Shi and Kaijie Wu and Mengying Zhao and Xue, {Chun Jason} and Sha, {Edwin H.-M.}",

year = "2014",

doi = "10.1145/2593069.2593203",

language = "English",

isbn = "9781479930173",

publisher = "IEEE",

booktitle = "Proceedings - Design Automation Conference",

address = "United States",

note = "51st Design Automation Conference (DAC 2014), DAC'14 ; Conference date: 01-06-2014 Through 05-06-2014",

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TY - GEN

T1 - Retention trimming for wear reduction of flash memory storage systems

AU - Shi, Liang

AU - Wu, Kaijie

AU - Zhao, Mengying

AU - Xue, Chun Jason

AU - Sha, Edwin H.-M.

PY - 2014

Y1 - 2014

N2 - NAND flash memory has been widely applied in embedded systems, personal computer systems, and data centers. However, with the development of flash memory, including its technology scaling and density improvement, the endurance of flash memory becomes a bottleneck. In this work, with the understanding of the relationship between data retention time and flash wearing, a retention trimming approach, which trims data retention time based on the time intervals between data updating, is proposed to reduce the wearing of flash memory. Reduced wearing of flash memory will improve the endurance of the flash memory. Extensive experimental results show that the proposed technique achieves significant wearing reduction for flash memory through retention trimming. Copyright 2014 ACM.

AB - NAND flash memory has been widely applied in embedded systems, personal computer systems, and data centers. However, with the development of flash memory, including its technology scaling and density improvement, the endurance of flash memory becomes a bottleneck. In this work, with the understanding of the relationship between data retention time and flash wearing, a retention trimming approach, which trims data retention time based on the time intervals between data updating, is proposed to reduce the wearing of flash memory. Reduced wearing of flash memory will improve the endurance of the flash memory. Extensive experimental results show that the proposed technique achieves significant wearing reduction for flash memory through retention trimming. Copyright 2014 ACM.

KW - Flash Memory

KW - Retention Time

KW - Wear Reduction

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UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-84903143580&origin=recordpage

U2 - 10.1145/2593069.2593203

DO - 10.1145/2593069.2593203

M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 9781479930173

BT - Proceedings - Design Automation Conference

PB - IEEE

T2 - 51st Design Automation Conference (DAC 2014)

Y2 - 1 June 2014 through 5 June 2014

ER -

Retention trimming for wear reduction of flash memory storage systems

Abstract

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