Resonance and antiresonance effects in electronic transport through several-quantum-dot combinations

Z. Z. Sun; R. Q. Zhang; W. Fan; X. R. Wang

doi:10.1063/1.3075771

Author(s)

Z. Z. Sun
R. Q. Zhang
W. Fan
X. R. Wang

Related Research Unit(s)

Centre of Super-Diamond and Advanced Films

Detail(s)

Original language	English
Article number	43706
Journal / Publication	Journal of Applied Physics
Volume	105
Issue number	4
Publication status	Published - 2009

Link(s)

DOI	DOI https://doi.org/10.1063/1.3075771 Final Published version
	Check@CityULib
Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-61449201341&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(8e5d35b8-931d-4da1-9a82-8e70c7607e5c).html

Abstract

We investigated the resonance and antiresonance effects in electronic transport through several-quantum-dot combinations by using the nonequilibrium Green's function method. All distinctive quantum-dot (QD) arrangements with one to three QDs and with different architectures were studied systematically. The theoretical and numerical results show that a peak in the current-voltage spectrum can be attributed to the resonance effect, whereas a dip is due to the antiresonance effect. The results will help experimenters to better understand their electronic measurements. © 2009 American Institute of Physics.

Citation Format(s)

[ RIS ] [ BibTeX ]

Resonance and antiresonance effects in electronic transport through several-quantum-dot combinations. / Sun, Z. Z.; Zhang, R. Q.; Fan, W. et al.
In: Journal of Applied Physics, Vol. 105, No. 4, 43706, 2009.

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

Sun, ZZ, Zhang, RQ, Fan, W & Wang, XR 2009, 'Resonance and antiresonance effects in electronic transport through several-quantum-dot combinations', Journal of Applied Physics, vol. 105, no. 4, 43706. https://doi.org/10.1063/1.3075771

Sun, Z. Z., Zhang, R. Q., Fan, W., & Wang, X. R. (2009). Resonance and antiresonance effects in electronic transport through several-quantum-dot combinations. Journal of Applied Physics, 105(4), Article 43706. https://doi.org/10.1063/1.3075771

Sun ZZ, Zhang RQ, Fan W, Wang XR. Resonance and antiresonance effects in electronic transport through several-quantum-dot combinations. Journal of Applied Physics. 2009;105(4):43706. doi: 10.1063/1.3075771

Sun, Z. Z. ; Zhang, R. Q. ; Fan, W. et al. / Resonance and antiresonance effects in electronic transport through several-quantum-dot combinations. In: Journal of Applied Physics. 2009 ; Vol. 105, No. 4.