Resistive Memory for Harsh Electronics: Immunity to Surface Effect and High Corrosion Resistance via Surface Modification

Teng-Han Huang; Po-Kang Yang; Der-Hsien Lien; Chen-Fang Kang; Meng-Lin Tsai; Yu-Lun Chueh; Jr-Hau He

doi:10.1038/srep04402

Resistive Memory for Harsh Electronics: Immunity to Surface Effect and High Corrosion Resistance via Surface Modification

Teng-Han Huang
, Po-Kang Yang
, Der-Hsien Lien
, Chen-Fang Kang
, Meng-Lin Tsai
, Yu-Lun Chueh
, Jr-Hau He^*

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

39 Citations (Scopus)

25 Downloads (CityUHK Scholars)

Abstract

The tolerance/resistance of the electronic devices to extremely harsh environments is of supreme interest. Surface effects and chemical corrosion adversely affect stability and operation uniformity of metal oxide resistive memories. To achieve the surrounding-independent behavior, the surface modification is introduced into the ZnO memristors via incorporating fluorine to replace the oxygen sites. F-Zn bonds is formed to prevent oxygen chemisorption and ZnO dissolution upon corrosive atmospheric exposure, which effectively improves switching characteristics against harmful surroundings. In addition, the fluorine doping stabilizes the cycling endurance and narrows the distribution of switching parameters. The outcomes provide valuable insights for future nonvolatile memory developments in harsh electronics.

Original language	English
Article number	4402
Journal	Scientific Reports
Volume	4
Online published	18 Mar 2014
DOIs	https://doi.org/10.1038/srep04402
Publication status	Published - 2014
Externally published	Yes

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This full text is made available under CC-BY 3.0. https://creativecommons.org/licenses/by/3.0/

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title = "Resistive Memory for Harsh Electronics: Immunity to Surface Effect and High Corrosion Resistance via Surface Modification",

abstract = "The tolerance/resistance of the electronic devices to extremely harsh environments is of supreme interest. Surface effects and chemical corrosion adversely affect stability and operation uniformity of metal oxide resistive memories. To achieve the surrounding-independent behavior, the surface modification is introduced into the ZnO memristors via incorporating fluorine to replace the oxygen sites. F-Zn bonds is formed to prevent oxygen chemisorption and ZnO dissolution upon corrosive atmospheric exposure, which effectively improves switching characteristics against harmful surroundings. In addition, the fluorine doping stabilizes the cycling endurance and narrows the distribution of switching parameters. The outcomes provide valuable insights for future nonvolatile memory developments in harsh electronics.",

author = "Teng-Han Huang and Po-Kang Yang and Der-Hsien Lien and Chen-Fang Kang and Meng-Lin Tsai and Yu-Lun Chueh and Jr-Hau He",

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TY - JOUR

T1 - Resistive Memory for Harsh Electronics

T2 - Immunity to Surface Effect and High Corrosion Resistance via Surface Modification

AU - Huang, Teng-Han

AU - Yang, Po-Kang

AU - Lien, Der-Hsien

AU - Kang, Chen-Fang

AU - Tsai, Meng-Lin

AU - Chueh, Yu-Lun

AU - He, Jr-Hau

PY - 2014

Y1 - 2014

N2 - The tolerance/resistance of the electronic devices to extremely harsh environments is of supreme interest. Surface effects and chemical corrosion adversely affect stability and operation uniformity of metal oxide resistive memories. To achieve the surrounding-independent behavior, the surface modification is introduced into the ZnO memristors via incorporating fluorine to replace the oxygen sites. F-Zn bonds is formed to prevent oxygen chemisorption and ZnO dissolution upon corrosive atmospheric exposure, which effectively improves switching characteristics against harmful surroundings. In addition, the fluorine doping stabilizes the cycling endurance and narrows the distribution of switching parameters. The outcomes provide valuable insights for future nonvolatile memory developments in harsh electronics.

AB - The tolerance/resistance of the electronic devices to extremely harsh environments is of supreme interest. Surface effects and chemical corrosion adversely affect stability and operation uniformity of metal oxide resistive memories. To achieve the surrounding-independent behavior, the surface modification is introduced into the ZnO memristors via incorporating fluorine to replace the oxygen sites. F-Zn bonds is formed to prevent oxygen chemisorption and ZnO dissolution upon corrosive atmospheric exposure, which effectively improves switching characteristics against harmful surroundings. In addition, the fluorine doping stabilizes the cycling endurance and narrows the distribution of switching parameters. The outcomes provide valuable insights for future nonvolatile memory developments in harsh electronics.

UR - https://www.scopus.com/pages/publications/84897885154

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-84897885154&origin=recordpage

U2 - 10.1038/srep04402

DO - 10.1038/srep04402

M3 - RGC 21 - Publication in refereed journal

C2 - 24638086

SN - 2045-2322

VL - 4

JO - Scientific Reports

JF - Scientific Reports

M1 - 4402

ER -

Resistive Memory for Harsh Electronics: Immunity to Surface Effect and High Corrosion Resistance via Surface Modification

Abstract

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