Reservoir effect and the role of low current density regions on electromigration lifetimes in copper interconnects

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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Author(s)

  • Z. H. Gan
  • W. Shao
  • S. G. Mhaisalkar
  • Z. Chen
  • Hongyu Li
  • A. M. Gusak

Detail(s)

Original languageEnglish
Pages (from-to)2241-2245
Journal / PublicationJournal of Materials Research
Volume21
Issue number9
Online published1 Sept 2006
Publication statusPublished - Sept 2006
Externally publishedYes

Abstract

Electromigration (EM) in copper dual-damascene interconnects with extensions (also described as overhang regions or reservoirs) in the upper metal (M2) were investigated. It was found that as the extension length increases from 0 to 60 nm, the median-time-to-failure increased from 50 to 140 h, representing a -200% improvement in lifetimes. However, further increment of the extension length from 60 to 120 nm did not result in any significant improvement in EM lifetimes. Based on calculations of current densities in the reservoir regions and recently reported nucleation, void movement, and agglomeration-based EM phenomena, it is proposed that there is a critical extension length beyond which increasing extension lengths will not lead to longer EM lifetimes. © 2006 Materials Research Society.

Citation Format(s)

Reservoir effect and the role of low current density regions on electromigration lifetimes in copper interconnects. / Gan, Z. H.; Shao, W.; Mhaisalkar, S. G. et al.
In: Journal of Materials Research, Vol. 21, No. 9, 09.2006, p. 2241-2245.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review