Research on the Interfacial Reaction between Anisotropically Conductive Film and Bumpless Die

Research output: Chapters, Conference Papers, Creative and Literary Works (RGC: 12, 32, 41, 45)32_Refereed conference paper (with ISBN/ISSN)peer-review

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Detail(s)

Original languageEnglish
Title of host publication2002 PROCEEDINGS - 52nd ELECTRONIC COMPONENTS & TECHNOLOGY CONFERENCE
Pages1569-1574
ISBN (Electronic)0-7803-7431-2
Publication statusPublished - May 2002

Publication series

NameProceedings - Electronic Components and Technology Conference
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISSN (Print)0569-5503

Conference

Title52nd Electronic Components and Technology Conference (ECTC 2002)
PlaceUnited States
CitySan Diego
Period28 - 31 May 2002

Abstract

This paper systematically discusses the influence of bonding pressure, bonding temperature and humidity on the adhesion strength of bumpless die (aluminum surface) with two kinds of Anisotropically Conductive Films (ACFs). Evaluated by die shear test, the adhesion strength between the ACFs and aluminum is not affected seriously by bonding pressure but it increases while bonding temperature increases. Adhesion strength at the ACF/aluminum interface increases while the adhesion at the ACF/glass surface decreases after aging in the same high temperature and high humidity environment. For ACF/aluminum layer, the adhesion enhancement mechanism after humidity aging is discussed by the research results of SAM, SEM & EDX, and XPS. Moisture mainly diffused into aluminum and resulted in oxidation reaction instead of diffusing into adhesive to make it swell. Fewer swelling of adhesive, fewer delaminations occured at the ACF/aluminum surface. So the adhesion strength of shear samples increased after temperature/humidity exposure. In addition, the oxidation reaction can provide fresh rougher surface that may enhance adhesion strength.

Research Area(s)

  • Adhesion, Aluminum, Anisotropically conductive film (ACF), Bumpless die, Interfacial reaction

Citation Format(s)

Research on the Interfacial Reaction between Anisotropically Conductive Film and Bumpless Die. / Zhang, J. H.; Chan, Y. C.; Zeng, Z. M.; Chiu, Y. W.

2002 PROCEEDINGS - 52nd ELECTRONIC COMPONENTS & TECHNOLOGY CONFERENCE. 2002. p. 1569-1574 (Proceedings - Electronic Components and Technology Conference).

Research output: Chapters, Conference Papers, Creative and Literary Works (RGC: 12, 32, 41, 45)32_Refereed conference paper (with ISBN/ISSN)peer-review