Reply to "Comment on 'Spin-dependent tunneling through a symmetric semiconductor barrier: The Dresselhaus effect'"

The present paper is the reply to Sandu's Comment on our paper, i.e., the effect of the current operator on the spin-dependent tunneling through a barrier in the presence of the Dresselhaus spin-orbit interaction (DSOI). We demonstrate theoretically and numerically that our previous numerical result is correct when there is no DSOI in the contact region and it remains a good approximation in the presence of the k3 -DSOI in the contact regions. © 2007 The American Physical Society.