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Remedies to control electromigration: Effects of CNT doped Sn-Ag-Cu interconnects

  • Sha Xu
  • , Xiaoxin Zhu
  • , Hiren Kotadia
  • , Hua Lu
  • , Samjid H. Mannan
  • , Chris Bailey
  • , Y. C. Chan*
  • *Corresponding author for this work

Research output: Chapters, Conference Papers, Creative and Literary WorksRGC 32 - Refereed conference paper (with host publication)peer-review

Abstract

Electromigration is a critical reliability problem in electronic industry, especially with the shrinkage and downscaling of microelectronic feature size, which results in gradual increase of current density. Carbon nanotube(CNT) doping is adopted in this paper. CNT has demonstrated high electromigration resistance. In our work, CNT doping is combined with SAC interconnects. A CNT after surfactant will be incorporated into SAC solder interconnection. Best percentage of CNT doping is found from this experiment, and better electromigration reliability can be observed from this work by SEM image. Moreover, the shear stress distribution is improved using computational study, which shows better mechanical properties. The combination of experimental and numerical study is highlighted in this work. © 2012 IEEE.
Original languageEnglish
Title of host publicationProceedings - Electronic Components and Technology Conference
Pages1899-1904
DOIs
Publication statusPublished - 2012
Event62nd IEEE Electronic Components and Technology Conference (ECTC 2012) - San Diego, CA, United States
Duration: 29 May 20121 Jun 2012

Publication series

Name
ISSN (Print)0569-5503

Conference

Conference62nd IEEE Electronic Components and Technology Conference (ECTC 2012)
PlaceUnited States
CitySan Diego, CA
Period29/05/121/06/12

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