TY - JOUR
T1 - Reliability study of the electroless Ni-P layer against solder alloy
AU - Alam, M. O.
AU - Chan, Y. C.
AU - Hung, K. C.
PY - 2002/7
Y1 - 2002/7
N2 - Copper (Cu) has been widely used in the under bump metallurgy of chip and substrate metallization for chip packaging. However, due to the rapid formation of Cu-Sn intermetallic compound (IMC) at the tin-based solder/Cu interface during solder reaction, the reliability of this type of solder joint is a serious concern. In this work, electroless nickel-phosphorous (Ni-P) layer was deposited on the Cu pad of the flexible substrate as a diffusion barrier between Cu and the solder materials. The deposition was carried out in a commercial acidic sodium hypophosphite bath at 85 °C for different pH values. It was found that for the same deposition time period, higher pH bath composition (mild acidic) yields thicker Ni-P layer with lower phosphorous content. Solder balls having composition 62%Sn-36%Pb-2%Ag were reflowed at 240 °C for 1 to 180 min on three types of electroless Ni-P layers deposited at the pH value of 4, 4.8 and 6, respectively. Thermal stability of the electroless Ni-P barrier layer against the Sn-36%Pb-2%Ag solder reflowed for different time periods was examined by scanning electron microscopy equipped with energy dispersed X-ray. Solder ball shear test was performed in order to find out the relationship between the mechanical strength of solder joints and the characteristics of the electroless Ni-P layer deposited. The layer deposited in the pH 4 acidic bath showed the weak barrier against reflow soldering whereas layer deposited in pH 6 acidic bath showed better barrier against reflow soldering. Mechanical strength of the joints were deteriorated quickly in the layer deposited at pH 4 acidic bath, which was found to be thin and has a high phosphorous content. From the cross-sectional studies and fracture surface analyses, it was found that the appearance of the dark crystalline phosphorous-rich Ni layer weakened the interface and hence lower solder ball shear strength. Ni-Sn IMC formed at the interfaces was found to be more stable at the low phosphorous content (∼ 14 at.%) layer. Electroless Ni-P deposited at mild acidic bath resulting phosphorous content of around 14 at.% is suggested as the best barrier layer for Sn-36%Pb-2%Ag solder. © 2002 Elsevier Science Ltd. All rights reserved.
AB - Copper (Cu) has been widely used in the under bump metallurgy of chip and substrate metallization for chip packaging. However, due to the rapid formation of Cu-Sn intermetallic compound (IMC) at the tin-based solder/Cu interface during solder reaction, the reliability of this type of solder joint is a serious concern. In this work, electroless nickel-phosphorous (Ni-P) layer was deposited on the Cu pad of the flexible substrate as a diffusion barrier between Cu and the solder materials. The deposition was carried out in a commercial acidic sodium hypophosphite bath at 85 °C for different pH values. It was found that for the same deposition time period, higher pH bath composition (mild acidic) yields thicker Ni-P layer with lower phosphorous content. Solder balls having composition 62%Sn-36%Pb-2%Ag were reflowed at 240 °C for 1 to 180 min on three types of electroless Ni-P layers deposited at the pH value of 4, 4.8 and 6, respectively. Thermal stability of the electroless Ni-P barrier layer against the Sn-36%Pb-2%Ag solder reflowed for different time periods was examined by scanning electron microscopy equipped with energy dispersed X-ray. Solder ball shear test was performed in order to find out the relationship between the mechanical strength of solder joints and the characteristics of the electroless Ni-P layer deposited. The layer deposited in the pH 4 acidic bath showed the weak barrier against reflow soldering whereas layer deposited in pH 6 acidic bath showed better barrier against reflow soldering. Mechanical strength of the joints were deteriorated quickly in the layer deposited at pH 4 acidic bath, which was found to be thin and has a high phosphorous content. From the cross-sectional studies and fracture surface analyses, it was found that the appearance of the dark crystalline phosphorous-rich Ni layer weakened the interface and hence lower solder ball shear strength. Ni-Sn IMC formed at the interfaces was found to be more stable at the low phosphorous content (∼ 14 at.%) layer. Electroless Ni-P deposited at mild acidic bath resulting phosphorous content of around 14 at.% is suggested as the best barrier layer for Sn-36%Pb-2%Ag solder. © 2002 Elsevier Science Ltd. All rights reserved.
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U2 - 10.1016/S0026-2714(02)00068-9
DO - 10.1016/S0026-2714(02)00068-9
M3 - RGC 21 - Publication in refereed journal
SN - 0026-2714
VL - 42
SP - 1065
EP - 1073
JO - Microelectronics Reliability
JF - Microelectronics Reliability
IS - 7
ER -