Reliability of nc-ZnO embedded ZrHfO high-k nonvolatile memory devices stressed at high temperatures

Chia-Han Yang; Yue Kuo; Chen-Han Lin; Way Kuo

doi:10.1557/PROC-1160-H02-01

Reliability of nc-ZnO embedded ZrHfO high-k nonvolatile memory devices stressed at high temperatures

Chia-Han Yang, Yue Kuo, Chen-Han Lin, Way Kuo

City University of Hong Kong

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

3 Citations (Scopus)

Abstract

The nanocrystalline ZnO embedded Zr-doped HfO₂ high-k dielectric has been made into MOS capacitors for nonvolatile memory studies. The device shows a large charge storage density, a large memory window, and a long charge retention time. In this paper, authors investigated the temperature effect on the reliability of this kind of device in the range of 25°C to 175°C. In addition to the trap-assisted conduction, the memory window and the breakdown strength decreased with the increase of the temperature. The high-k film's conductivity increased and the nc-ZnO's charge retention capability decreased with the increase of temperature. The nc-ZnO retained the trapped charges even after the high-k film broke down and eventually lost the charges at a higher voltage. The difference between these two voltages decreased with the increase of the temperature. © 2009 Materials Research Society.

Original language	English
Title of host publication	Materials Research Society Symposium Proceedings
Chapter	201
Pages	25-31
Volume	1160
DOIs	https://doi.org/10.1557/PROC-1160-H02-01
Publication status	Published - 1 Jul 2009
Event	2009 MRS Spring Meeting - San Francisco, United States Duration: 14 Apr 2009 → 17 Apr 2009 https://www.amazon.com/Materials-Strategies-Lab-Chip-Nanostructures/dp/1107408156

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Name
Volume	1160
ISSN (Print)	0272-9172

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Conference	2009 MRS Spring Meeting
Place	United States
City	San Francisco
Period	14/04/09 → 17/04/09
Internet address	https://www.amazon.com/Materials-Strategies-Lab-Chip-Nanostructures/dp/1107408156

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@inproceedings{7f28a724d8ab4513be7c9dd12c5741ab,

title = "Reliability of nc-ZnO embedded ZrHfO high-k nonvolatile memory devices stressed at high temperatures",

abstract = "The nanocrystalline ZnO embedded Zr-doped HfO2 high-k dielectric has been made into MOS capacitors for nonvolatile memory studies. The device shows a large charge storage density, a large memory window, and a long charge retention time. In this paper, authors investigated the temperature effect on the reliability of this kind of device in the range of 25°C to 175°C. In addition to the trap-assisted conduction, the memory window and the breakdown strength decreased with the increase of the temperature. The high-k film's conductivity increased and the nc-ZnO's charge retention capability decreased with the increase of temperature. The nc-ZnO retained the trapped charges even after the high-k film broke down and eventually lost the charges at a higher voltage. The difference between these two voltages decreased with the increase of the temperature. {\textcopyright} 2009 Materials Research Society.",

author = "Chia-Han Yang and Yue Kuo and Chen-Han Lin and Way Kuo",

year = "2009",

month = jul,

day = "1",

doi = "10.1557/PROC-1160-H02-01",

language = "English",

isbn = "9781605111339",

volume = "1160",

pages = "25--31",

booktitle = "Materials Research Society Symposium Proceedings",

note = "2009 MRS Spring Meeting ; Conference date: 14-04-2009 Through 17-04-2009",

url = "https://www.amazon.com/Materials-Strategies-Lab-Chip-Nanostructures/dp/1107408156",

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Reliability of nc-ZnO embedded ZrHfO high-k nonvolatile memory devices stressed at high temperatures. / Yang, Chia-Han; Kuo, Yue; Lin, Chen-Han et al.
Materials Research Society Symposium Proceedings. Vol. 1160 2009. p. 25-31.

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

TY - GEN

T1 - Reliability of nc-ZnO embedded ZrHfO high-k nonvolatile memory devices stressed at high temperatures

AU - Yang, Chia-Han

AU - Kuo, Yue

AU - Lin, Chen-Han

AU - Kuo, Way

PY - 2009/7/1

Y1 - 2009/7/1

N2 - The nanocrystalline ZnO embedded Zr-doped HfO2 high-k dielectric has been made into MOS capacitors for nonvolatile memory studies. The device shows a large charge storage density, a large memory window, and a long charge retention time. In this paper, authors investigated the temperature effect on the reliability of this kind of device in the range of 25°C to 175°C. In addition to the trap-assisted conduction, the memory window and the breakdown strength decreased with the increase of the temperature. The high-k film's conductivity increased and the nc-ZnO's charge retention capability decreased with the increase of temperature. The nc-ZnO retained the trapped charges even after the high-k film broke down and eventually lost the charges at a higher voltage. The difference between these two voltages decreased with the increase of the temperature. © 2009 Materials Research Society.

AB - The nanocrystalline ZnO embedded Zr-doped HfO2 high-k dielectric has been made into MOS capacitors for nonvolatile memory studies. The device shows a large charge storage density, a large memory window, and a long charge retention time. In this paper, authors investigated the temperature effect on the reliability of this kind of device in the range of 25°C to 175°C. In addition to the trap-assisted conduction, the memory window and the breakdown strength decreased with the increase of the temperature. The high-k film's conductivity increased and the nc-ZnO's charge retention capability decreased with the increase of temperature. The nc-ZnO retained the trapped charges even after the high-k film broke down and eventually lost the charges at a higher voltage. The difference between these two voltages decreased with the increase of the temperature. © 2009 Materials Research Society.

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UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-77649176456&origin=recordpage

U2 - 10.1557/PROC-1160-H02-01

DO - 10.1557/PROC-1160-H02-01

M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 9781605111339

VL - 1160

SP - 25

EP - 31

BT - Materials Research Society Symposium Proceedings

T2 - 2009 MRS Spring Meeting

Y2 - 14 April 2009 through 17 April 2009

ER -

Reliability of nc-ZnO embedded ZrHfO high-k nonvolatile memory devices stressed at high temperatures

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