Released submicrometer Si microstructures formed by one-step dry etching

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal

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Detail(s)

Original languageEnglish
Pages (from-to)433-438
Journal / PublicationJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume19
Issue number2
Publication statusPublished - Mar 2001
Externally publishedYes

Abstract

Released submicrometer microstructures in Si were patterned using Cl2 and F-based etching in inductively coupled plasma systems. Poly-Si trenches that were 0.1 μm wide and 4 μm deep with an aspect ratio of 40 were demonstrated with Cl2 etching. The resulting data indicate that a smooth etched surface without residues or enhanced lateral etching at the bottom of the trenches can be achieved by Cl2 etching.