Released submicrometer Si microstructures formed by one-step dry etching

W. C. Tian; S. W. Pang

doi:10.1116/1.1356066

Released submicrometer Si microstructures formed by one-step dry etching

W. C. Tian, S. W. Pang

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

7 Citations (Scopus)

Abstract

Released submicrometer microstructures in Si were patterned using Cl₂ and F-based etching in inductively coupled plasma systems. Poly-Si trenches that were 0.1 μm wide and 4 μm deep with an aspect ratio of 40 were demonstrated with Cl₂ etching. The resulting data indicate that a smooth etched surface without residues or enhanced lateral etching at the bottom of the trenches can be achieved by Cl₂ etching.

Original language	English
Pages (from-to)	433-438
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	19
Issue number	2
DOIs	https://doi.org/10.1116/1.1356066
Publication status	Published - Mar 2001
Externally published	Yes

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title = "Released submicrometer Si microstructures formed by one-step dry etching",

abstract = "Released submicrometer microstructures in Si were patterned using Cl2 and F-based etching in inductively coupled plasma systems. Poly-Si trenches that were 0.1 μm wide and 4 μm deep with an aspect ratio of 40 were demonstrated with Cl2 etching. The resulting data indicate that a smooth etched surface without residues or enhanced lateral etching at the bottom of the trenches can be achieved by Cl2 etching.",

author = "Tian, {W. C.} and Pang, {S. W.}",

year = "2001",

month = mar,

doi = "10.1116/1.1356066",

language = "English",

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AU - Tian, W. C.

AU - Pang, S. W.

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AB - Released submicrometer microstructures in Si were patterned using Cl2 and F-based etching in inductively coupled plasma systems. Poly-Si trenches that were 0.1 μm wide and 4 μm deep with an aspect ratio of 40 were demonstrated with Cl2 etching. The resulting data indicate that a smooth etched surface without residues or enhanced lateral etching at the bottom of the trenches can be achieved by Cl2 etching.

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DO - 10.1116/1.1356066

M3 - RGC 21 - Publication in refereed journal

SN - 0734-211X

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JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

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ER -

Released submicrometer Si microstructures formed by one-step dry etching

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