Relaxed silicon-germanium-on-insulator substrates by oxygen implantation into pseudomorphic silicon germanium/silicon heterostructure

Znenghua An; Yanjun Wu; Miao Zhang; Zengfeng Di; Chenglu Lin; Ricky K. Y. Fu; Peng Chen; Paul K. Chu; W. Y. Cheung; S. P. Wong

doi:10.1063/1.1567807

Relaxed silicon-germanium-on-insulator substrates by oxygen implantation into pseudomorphic silicon germanium/silicon heterostructure

Znenghua An
, Yanjun Wu
, Miao Zhang
, Zengfeng Di
, Chenglu Lin
, Ricky K. Y. Fu
, Peng Chen
, Paul K. Chu^*
, W. Y. Cheung
, S. P. Wong

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

14 Citations (Scopus)

Abstract

The development of separation-by-implantation-of-oxygen (SIMOX) process for fabricating silicon-germanium-on-insulator (SGOI) substrates by oxygen implantation into pseudomorphic silicon germanium/silicon heterostructure was discussed. Following two annealing processes (∼800 + 1350°C), a buried silicon dioxide layer was created near the original SiGe/Si interface, resulting in fully relaxed SGOI structure. It was shown that an annealing step at a moderate temperature (∼800°C) leads to less Ge loss.

Original language	English
Pages (from-to)	2452-2454
Journal	Applied Physics Letters
Volume	82
Issue number	15
DOIs	https://doi.org/10.1063/1.1567807
Publication status	Published - 14 Apr 2003

Access Output

10.1063/1.1567807

Other Access Options

Check CityUHK Library

Permanent Link

Right click to copy link

Cite this

@article{52db35b0df58429ab9301b3e935b659b,

title = "Relaxed silicon-germanium-on-insulator substrates by oxygen implantation into pseudomorphic silicon germanium/silicon heterostructure",

abstract = "The development of separation-by-implantation-of-oxygen (SIMOX) process for fabricating silicon-germanium-on-insulator (SGOI) substrates by oxygen implantation into pseudomorphic silicon germanium/silicon heterostructure was discussed. Following two annealing processes (∼800 + 1350°C), a buried silicon dioxide layer was created near the original SiGe/Si interface, resulting in fully relaxed SGOI structure. It was shown that an annealing step at a moderate temperature (∼800°C) leads to less Ge loss.",

author = "Znenghua An and Yanjun Wu and Miao Zhang and Zengfeng Di and Chenglu Lin and Fu, \{Ricky K. Y.\} and Peng Chen and Chu, \{Paul K.\} and Cheung, \{W. Y.\} and Wong, \{S. P.\}",

year = "2003",

month = apr,

day = "14",

doi = "10.1063/1.1567807",

language = "English",

volume = "82",

pages = "2452--2454",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "15",

}

TY - JOUR

T1 - Relaxed silicon-germanium-on-insulator substrates by oxygen implantation into pseudomorphic silicon germanium/silicon heterostructure

AU - An, Znenghua

AU - Wu, Yanjun

AU - Zhang, Miao

AU - Di, Zengfeng

AU - Lin, Chenglu

AU - Fu, Ricky K. Y.

AU - Chen, Peng

AU - Chu, Paul K.

AU - Cheung, W. Y.

AU - Wong, S. P.

PY - 2003/4/14

Y1 - 2003/4/14

N2 - The development of separation-by-implantation-of-oxygen (SIMOX) process for fabricating silicon-germanium-on-insulator (SGOI) substrates by oxygen implantation into pseudomorphic silicon germanium/silicon heterostructure was discussed. Following two annealing processes (∼800 + 1350°C), a buried silicon dioxide layer was created near the original SiGe/Si interface, resulting in fully relaxed SGOI structure. It was shown that an annealing step at a moderate temperature (∼800°C) leads to less Ge loss.

AB - The development of separation-by-implantation-of-oxygen (SIMOX) process for fabricating silicon-germanium-on-insulator (SGOI) substrates by oxygen implantation into pseudomorphic silicon germanium/silicon heterostructure was discussed. Following two annealing processes (∼800 + 1350°C), a buried silicon dioxide layer was created near the original SiGe/Si interface, resulting in fully relaxed SGOI structure. It was shown that an annealing step at a moderate temperature (∼800°C) leads to less Ge loss.

UR - https://www.scopus.com/pages/publications/0037988831

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0037988831&origin=recordpage

U2 - 10.1063/1.1567807

DO - 10.1063/1.1567807

M3 - RGC 21 - Publication in refereed journal

SN - 0003-6951

VL - 82

SP - 2452

EP - 2454

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

ER -

Relaxed silicon-germanium-on-insulator substrates by oxygen implantation into pseudomorphic silicon germanium/silicon heterostructure

Abstract

Access Output

Other Access Options

Permanent Link

Other Files and Links

Fingerprint

Cite this