Relaxation mechanism of SiGe thin film on SOI substrate

Zengfeng Di; Miao Zhang; Weili Liu; Ming Zhu; Chenglu Lin; Paul K. Chu

doi:10.1117/12.607906

Relaxation mechanism of SiGe thin film on SOI substrate

Zengfeng Di, Miao Zhang, Weili Liu, Ming Zhu, Chenglu Lin, Paul K. Chu

Research output: Journal Publications and Reviews › RGC 22 - Publication in policy or professional journal

Abstract

A different annealing method for the Si/SiGe bilayer fabricated on SIMOX wafer is proposed. After annealing for a short time, the Si/SiGe bilayer relaxes via the gliding motion of dislocations in the Si layer exclusively, leaving the top SiGe layer relaxed and mostly dislocation free. In addition, Ge does not diffuse into the top Si layer of SOI substrate to assist in the relaxation of the structure at the highest annealing temperature. At low annealing temperature, SiO₂ is not expected to be viscous, and so the strain ratio is reduced in a linear fashion between 600°C and 900°C. When the annealing temperature becomes higher (for instance, 1000°C that is 58.5% of its melting point of 1710°C), the oxide can flow and the Si/SiGe bilayer behaves like a constrained thin foil slipping on the oxide. In this case, the strain ratio is dramatically reduced.

Original language	English
Article number	143
Pages (from-to)	611-615
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	5774
DOIs	https://doi.org/10.1117/12.607906
Publication status	Published - 2005
Event	Fifth International Conference on Thin Film Physics and Applications - Shanghai, China Duration: 31 May 2004 → 2 Jun 2004

Research Keywords

Annealing
Dislocation
Relaxed SiGe
SOI

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title = "Relaxation mechanism of SiGe thin film on SOI substrate",

abstract = "A different annealing method for the Si/SiGe bilayer fabricated on SIMOX wafer is proposed. After annealing for a short time, the Si/SiGe bilayer relaxes via the gliding motion of dislocations in the Si layer exclusively, leaving the top SiGe layer relaxed and mostly dislocation free. In addition, Ge does not diffuse into the top Si layer of SOI substrate to assist in the relaxation of the structure at the highest annealing temperature. At low annealing temperature, SiO2 is not expected to be viscous, and so the strain ratio is reduced in a linear fashion between 600°C and 900°C. When the annealing temperature becomes higher (for instance, 1000°C that is 58.5% of its melting point of 1710°C), the oxide can flow and the Si/SiGe bilayer behaves like a constrained thin foil slipping on the oxide. In this case, the strain ratio is dramatically reduced.",

keywords = "Annealing, Dislocation, Relaxed SiGe, SOI",

author = "Zengfeng Di and Miao Zhang and Weili Liu and Ming Zhu and Chenglu Lin and Chu, {Paul K.}",

year = "2005",

doi = "10.1117/12.607906",

language = "English",

volume = "5774",

pages = "611--615",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE - International Society for Optical Engineering",

note = "Fifth International Conference on Thin Film Physics and Applications ; Conference date: 31-05-2004 Through 02-06-2004",

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TY - JOUR

T1 - Relaxation mechanism of SiGe thin film on SOI substrate

AU - Di, Zengfeng

AU - Zhang, Miao

AU - Liu, Weili

AU - Zhu, Ming

AU - Lin, Chenglu

AU - Chu, Paul K.

PY - 2005

Y1 - 2005

N2 - A different annealing method for the Si/SiGe bilayer fabricated on SIMOX wafer is proposed. After annealing for a short time, the Si/SiGe bilayer relaxes via the gliding motion of dislocations in the Si layer exclusively, leaving the top SiGe layer relaxed and mostly dislocation free. In addition, Ge does not diffuse into the top Si layer of SOI substrate to assist in the relaxation of the structure at the highest annealing temperature. At low annealing temperature, SiO2 is not expected to be viscous, and so the strain ratio is reduced in a linear fashion between 600°C and 900°C. When the annealing temperature becomes higher (for instance, 1000°C that is 58.5% of its melting point of 1710°C), the oxide can flow and the Si/SiGe bilayer behaves like a constrained thin foil slipping on the oxide. In this case, the strain ratio is dramatically reduced.

AB - A different annealing method for the Si/SiGe bilayer fabricated on SIMOX wafer is proposed. After annealing for a short time, the Si/SiGe bilayer relaxes via the gliding motion of dislocations in the Si layer exclusively, leaving the top SiGe layer relaxed and mostly dislocation free. In addition, Ge does not diffuse into the top Si layer of SOI substrate to assist in the relaxation of the structure at the highest annealing temperature. At low annealing temperature, SiO2 is not expected to be viscous, and so the strain ratio is reduced in a linear fashion between 600°C and 900°C. When the annealing temperature becomes higher (for instance, 1000°C that is 58.5% of its melting point of 1710°C), the oxide can flow and the Si/SiGe bilayer behaves like a constrained thin foil slipping on the oxide. In this case, the strain ratio is dramatically reduced.

KW - Annealing

KW - Dislocation

KW - Relaxed SiGe

KW - SOI

UR - http://www.scopus.com/inward/record.url?scp=25644432889&partnerID=8YFLogxK

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-25644432889&origin=recordpage

U2 - 10.1117/12.607906

DO - 10.1117/12.607906

M3 - RGC 22 - Publication in policy or professional journal

SN - 0277-786X

VL - 5774

SP - 611

EP - 615

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

M1 - 143

T2 - Fifth International Conference on Thin Film Physics and Applications

Y2 - 31 May 2004 through 2 June 2004

ER -

Relaxation mechanism of SiGe thin film on SOI substrate

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Research Keywords

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