Relation between structural and optical properties of InN and InxGa1-xN thin films

Z. Liliental-Weber; D. N. Zakharov; J. Jasinski; K. M. Yu; J. Wu; J. W. Ager III; W. Walukiewicz; E. E. Haller; H. Lu; S. X. Li; W. J. Schaff

doi:10.1063/1.1994067

Relation between structural and optical properties of InN and In_xGa_1-xN thin films

Z. Liliental-Weber, D. N. Zakharov, J. Jasinski, K. M. Yu, J. Wu, J. W. Ager III, W. Walukiewicz, E. E. Haller, H. Lu, S. X. Li, W. J. Schaff

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

Abstract

Transmission Electron Microscopy (TEM) and optical measurements obtained from InN and In_1-xGa_xN films (0 <x <0.54) grown by Molecular Beam Epitaxy are presented. Energy gaps measured by absorption, PR, and PL for InN films grown on c-plane Al₂O₃ were in the range of 0.7 eV. No In or other inclusions were observed in these films, ruling out the possibility of a strong Mie scattering mechanism. In the In_1-xGa_xN films the relationship between the structural properties and the optical properties, in particular the presence or absence of a Stokes shift between absorption and PL, is discussed. TEM studies show that high quality layers do not have a Stokes shift. Some films had compositional ordering; these films also showed a shift between absorption edge and luminescence peak.s © 2005 American Institute of Physics.

Original language	English
Title of host publication	PHYSICS OF SEMICONDUCTORS
Subtitle of host publication	27^th International Conference on the Physics of Semiconductors
Editors	José Menéndez, Chris G. Van de Walle
Publisher	American Institute of Physics
Pages	209-210
ISBN (Print)	0735402574, 9780735402577
DOIs	https://doi.org/10.1063/1.1994067
Publication status	Published - 30 Jun 2005
Externally published	Yes
Event	27th International Conference on the Physics of Semiconductors (ICPS 27) - Flagstaff, AZ, United States Duration: 26 Jul 2004 → 30 Jul 2004

Publication series

Name	AIP Conference Proceedings
Volume	772
ISSN (Print)	0094-243X
ISSN (Electronic)	1551-7616

Conference

Conference	27th International Conference on the Physics of Semiconductors (ICPS 27)
Place	United States
City	Flagstaff, AZ
Period	26/07/04 → 30/07/04

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Liliental-Weber, Z., Zakharov, D. N., Jasinski, J., Yu, K. M., Wu, J., Ager III, J. W., Walukiewicz, W., Haller, E. E., Lu, H., Li, S. X., & Schaff, W. J. (2005). Relation between structural and optical properties of InN and In_xGa_1-xN thin films. In J. Menéndez, & C. G. Van de Walle (Eds.), PHYSICS OF SEMICONDUCTORS: 27^th International Conference on the Physics of Semiconductors (pp. 209-210). (AIP Conference Proceedings; Vol. 772). American Institute of Physics. https://doi.org/10.1063/1.1994067

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title = "Relation between structural and optical properties of InN and InxGa1-xN thin films",

abstract = "Transmission Electron Microscopy (TEM) and optical measurements obtained from InN and In1-xGaxN films (0 2O3 were in the range of 0.7 eV. No In or other inclusions were observed in these films, ruling out the possibility of a strong Mie scattering mechanism. In the In1-xGaxN films the relationship between the structural properties and the optical properties, in particular the presence or absence of a Stokes shift between absorption and PL, is discussed. TEM studies show that high quality layers do not have a Stokes shift. Some films had compositional ordering; these films also showed a shift between absorption edge and luminescence peak.s {\textcopyright} 2005 American Institute of Physics.",

author = "Z. Liliental-Weber and Zakharov, {D. N.} and J. Jasinski and Yu, {K. M.} and J. Wu and {Ager III}, {J. W.} and W. Walukiewicz and Haller, {E. E.} and H. Lu and Li, {S. X.} and Schaff, {W. J.}",

year = "2005",

month = jun,

day = "30",

doi = "10.1063/1.1994067",

language = "English",

isbn = "0735402574",

series = "AIP Conference Proceedings",

publisher = "American Institute of Physics",

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booktitle = "PHYSICS OF SEMICONDUCTORS",

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note = "27th International Conference on the Physics of Semiconductors (ICPS 27) ; Conference date: 26-07-2004 Through 30-07-2004",

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Liliental-Weber, Z, Zakharov, DN, Jasinski, J, Yu, KM, Wu, J, Ager III, JW, Walukiewicz, W, Haller, EE, Lu, H, Li, SX & Schaff, WJ 2005, Relation between structural and optical properties of InN and In_xGa_1-xN thin films. in J Menéndez & CG Van de Walle (eds), PHYSICS OF SEMICONDUCTORS: 27^th International Conference on the Physics of Semiconductors. AIP Conference Proceedings, vol. 772, American Institute of Physics, pp. 209-210, 27th International Conference on the Physics of Semiconductors (ICPS 27), Flagstaff, AZ, United States, 26/07/04. https://doi.org/10.1063/1.1994067

Relation between structural and optical properties of InN and In_xGa_1-xN thin films. / Liliental-Weber, Z.; Zakharov, D. N.; Jasinski, J. et al.
PHYSICS OF SEMICONDUCTORS: 27^th International Conference on the Physics of Semiconductors. ed. / José Menéndez; Chris G. Van de Walle. American Institute of Physics, 2005. p. 209-210 (AIP Conference Proceedings; Vol. 772).

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

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AU - Zakharov, D. N.

AU - Jasinski, J.

AU - Yu, K. M.

AU - Wu, J.

AU - Ager III, J. W.

AU - Walukiewicz, W.

AU - Haller, E. E.

AU - Lu, H.

AU - Li, S. X.

AU - Schaff, W. J.

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N2 - Transmission Electron Microscopy (TEM) and optical measurements obtained from InN and In1-xGaxN films (0 2O3 were in the range of 0.7 eV. No In or other inclusions were observed in these films, ruling out the possibility of a strong Mie scattering mechanism. In the In1-xGaxN films the relationship between the structural properties and the optical properties, in particular the presence or absence of a Stokes shift between absorption and PL, is discussed. TEM studies show that high quality layers do not have a Stokes shift. Some films had compositional ordering; these films also showed a shift between absorption edge and luminescence peak.s © 2005 American Institute of Physics.

AB - Transmission Electron Microscopy (TEM) and optical measurements obtained from InN and In1-xGaxN films (0 2O3 were in the range of 0.7 eV. No In or other inclusions were observed in these films, ruling out the possibility of a strong Mie scattering mechanism. In the In1-xGaxN films the relationship between the structural properties and the optical properties, in particular the presence or absence of a Stokes shift between absorption and PL, is discussed. TEM studies show that high quality layers do not have a Stokes shift. Some films had compositional ordering; these films also showed a shift between absorption edge and luminescence peak.s © 2005 American Institute of Physics.

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Liliental-Weber Z, Zakharov DN, Jasinski J, Yu KM, Wu J, Ager III JW et al. Relation between structural and optical properties of InN and In_xGa_1-xN thin films. In Menéndez J, Van de Walle CG, editors, PHYSICS OF SEMICONDUCTORS: 27^th International Conference on the Physics of Semiconductors. American Institute of Physics. 2005. p. 209-210. (AIP Conference Proceedings). doi: 10.1063/1.1994067