Reduction of contact resistivity by As redistribution during Pd2Si formation

I. Ohdomari; M. Hori; T. Maeda; A. Ogura; H. Kawarada; T. Hamamoto; K. Sano; K. N. Tu; M. Wittmer; I. Kimura; K. Yoneda

doi:10.1063/1.332630

Reduction of contact resistivity by As redistribution during Pd₂Si formation

I. Ohdomari
, M. Hori
, T. Maeda
, A. Ogura
, H. Kawarada
, T. Hamamoto
, K. Sano
, K. N. Tu
, M. Wittmer
, I. Kimura
, K. Yoneda

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

14 Citations (Scopus)

Abstract

We have investigated the redistribution of uniformly doped As atoms (N _D= 4.0×10¹⁹ cm^-3) in Si during Pd₂Si formation with neutron activation analysis and the influence of the redistribution on contact resistivity. Some of the uniformly doped As atoms are pushed ahead into Si near the silicide-silicon interface during Pd₂Si formation at 250 °C. The amount of the redistributed As atoms increases with the thickness of Si consumed and reaches a peak concentration of 2.0×10²⁰ cm^-³. Contact resistivity is reduced from the initial values of 3.8×10^-5-4.1×10^-4 Ω cm² before silicide formation, to a final value of 1.8×10^-6 Ω cm² after complete reaction. The electrically active As atoms is estimated to be 50% of the total redistributed.

Original language	English
Pages (from-to)	4679-4682
Journal	Journal of Applied Physics
Volume	54
Issue number	8
DOIs	https://doi.org/10.1063/1.332630
Publication status	Published - 1 Aug 1983
Externally published	Yes

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@article{b665b3833a2743abbb6dc64c126dac05,

title = "Reduction of contact resistivity by As redistribution during Pd2Si formation",

abstract = "We have investigated the redistribution of uniformly doped As atoms (N D = 4.0×1019 cm-3) in Si during Pd2Si formation with neutron activation analysis and the influence of the redistribution on contact resistivity. Some of the uniformly doped As atoms are pushed ahead into Si near the silicide-silicon interface during Pd2Si formation at 250 °C. The amount of the redistributed As atoms increases with the thickness of Si consumed and reaches a peak concentration of 2.0×1020 cm-3. Contact resistivity is reduced from the initial values of 3.8×10-5-4.1×10-4 Ω cm2 before silicide formation, to a final value of 1.8×10-6 Ω cm2 after complete reaction. The electrically active As atoms is estimated to be 50\% of the total redistributed.",

author = "I. Ohdomari and M. Hori and T. Maeda and A. Ogura and H. Kawarada and T. Hamamoto and K. Sano and Tu, \{K. N.\} and M. Wittmer and I. Kimura and K. Yoneda",

note = "Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].",

year = "1983",

month = aug,

day = "1",

doi = "10.1063/1.332630",

language = "English",

volume = "54",

pages = "4679--4682",

journal = "Journal of Applied Physics",

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publisher = "American Institute of Physics",

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TY - JOUR

T1 - Reduction of contact resistivity by As redistribution during Pd2Si formation

AU - Ohdomari, I.

AU - Hori, M.

AU - Maeda, T.

AU - Ogura, A.

AU - Kawarada, H.

AU - Hamamoto, T.

AU - Sano, K.

AU - Tu, K. N.

AU - Wittmer, M.

AU - Kimura, I.

AU - Yoneda, K.

N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

PY - 1983/8/1

Y1 - 1983/8/1

N2 - We have investigated the redistribution of uniformly doped As atoms (N D = 4.0×1019 cm-3) in Si during Pd2Si formation with neutron activation analysis and the influence of the redistribution on contact resistivity. Some of the uniformly doped As atoms are pushed ahead into Si near the silicide-silicon interface during Pd2Si formation at 250 °C. The amount of the redistributed As atoms increases with the thickness of Si consumed and reaches a peak concentration of 2.0×1020 cm-3. Contact resistivity is reduced from the initial values of 3.8×10-5-4.1×10-4 Ω cm2 before silicide formation, to a final value of 1.8×10-6 Ω cm2 after complete reaction. The electrically active As atoms is estimated to be 50% of the total redistributed.

AB - We have investigated the redistribution of uniformly doped As atoms (N D = 4.0×1019 cm-3) in Si during Pd2Si formation with neutron activation analysis and the influence of the redistribution on contact resistivity. Some of the uniformly doped As atoms are pushed ahead into Si near the silicide-silicon interface during Pd2Si formation at 250 °C. The amount of the redistributed As atoms increases with the thickness of Si consumed and reaches a peak concentration of 2.0×1020 cm-3. Contact resistivity is reduced from the initial values of 3.8×10-5-4.1×10-4 Ω cm2 before silicide formation, to a final value of 1.8×10-6 Ω cm2 after complete reaction. The electrically active As atoms is estimated to be 50% of the total redistributed.

UR - https://www.scopus.com/pages/publications/0020799562

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0020799562&origin=recordpage

U2 - 10.1063/1.332630

DO - 10.1063/1.332630

M3 - RGC 21 - Publication in refereed journal

SN - 0021-8979

VL - 54

SP - 4679

EP - 4682

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 8

ER -