Reduction of band-gap energy in GaNAs and AlGaNAs synthesized by N+ implantation

Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review

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Author(s)

  • W. Shan
  • W. Walukiewicz
  • J. W. Ager III
  • E. E. Haller
  • M. C. Ridgway

Detail(s)

Original languageEnglish
Pages (from-to)1410-1412
Journal / PublicationApplied Physics Letters
Volume75
Issue number10
Publication statusPublished - 6 Sep 1999
Externally publishedYes

Link(s)

Check@CityULib
Link to Scopus https://www.scopus.com/record/display.uri?eid=2-s2.0-0032606273&origin=recordpage
Permanent Link https://scholars.cityu.edu.hk/en/publications/publication(26d745f5-b03e-4c9b-8155-107a6f00cb3f).html

Abstract

The optical properties of nitrogen implanted GaAs and AlGaAs were investigated. The change in band-gap energy in the implanted region was analyzed using photomodulation spectroscopy. Results showed that by increasing N+ implantation dosage, the fundamental band-gap energy decreases.

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100
Energy gap Engineering & Materials S...
31
Optical properties Engineering & Materials S...
29
Spectroscopy Engineering & Materials S...
27
Nitrogen Engineering & Materials S...
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Citation Format(s)

[ RIS ] [ BibTeX ]

Reduction of band-gap energy in GaNAs and AlGaNAs synthesized by N+ implantation. / Shan, W.; Yu, K. M.; Walukiewicz, W. et al.

In: Applied Physics Letters, Vol. 75, No. 10, 06.09.1999, p. 1410-1412.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review