Reduction of band-gap energy in GaNAs and AlGaNAs synthesized by N+ implantation

W. Shan; K. M. Yu; W. Walukiewicz; J. W. Ager III; E. E. Haller; M. C. Ridgway

doi:10.1063/1.124951

Reduction of band-gap energy in GaNAs and AlGaNAs synthesized by N+ implantation

W. Shan^*
, K. M. Yu
, W. Walukiewicz
, J. W. Ager III
, E. E. Haller
, M. C. Ridgway

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

91 Citations (Scopus)

Abstract

The optical properties of nitrogen implanted GaAs and AlGaAs were investigated. The change in band-gap energy in the implanted region was analyzed using photomodulation spectroscopy. Results showed that by increasing N⁺ implantation dosage, the fundamental band-gap energy decreases.

Original language	English
Pages (from-to)	1410-1412
Journal	Applied Physics Letters
Volume	75
Issue number	10
DOIs	https://doi.org/10.1063/1.124951
Publication status	Published - 6 Sept 1999
Externally published	Yes

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@article{26d745f5b03e4c9b8155107a6f00cb3f,

title = "Reduction of band-gap energy in GaNAs and AlGaNAs synthesized by N+ implantation",

abstract = "The optical properties of nitrogen implanted GaAs and AlGaAs were investigated. The change in band-gap energy in the implanted region was analyzed using photomodulation spectroscopy. Results showed that by increasing N+ implantation dosage, the fundamental band-gap energy decreases.",

author = "W. Shan and Yu, \{K. M.\} and W. Walukiewicz and \{Ager III\}, \{J. W.\} and Haller, \{E. E.\} and Ridgway, \{M. C.\}",

year = "1999",

month = sep,

day = "6",

doi = "10.1063/1.124951",

language = "English",

volume = "75",

pages = "1410--1412",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Reduction of band-gap energy in GaNAs and AlGaNAs synthesized by N+ implantation

AU - Shan, W.

AU - Yu, K. M.

AU - Walukiewicz, W.

AU - Ager III, J. W.

AU - Haller, E. E.

AU - Ridgway, M. C.

PY - 1999/9/6

Y1 - 1999/9/6

N2 - The optical properties of nitrogen implanted GaAs and AlGaAs were investigated. The change in band-gap energy in the implanted region was analyzed using photomodulation spectroscopy. Results showed that by increasing N+ implantation dosage, the fundamental band-gap energy decreases.

AB - The optical properties of nitrogen implanted GaAs and AlGaAs were investigated. The change in band-gap energy in the implanted region was analyzed using photomodulation spectroscopy. Results showed that by increasing N+ implantation dosage, the fundamental band-gap energy decreases.

UR - https://www.scopus.com/pages/publications/0032606273

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0032606273&origin=recordpage

U2 - 10.1063/1.124951

DO - 10.1063/1.124951

M3 - RGC 21 - Publication in refereed journal

SN - 0003-6951

VL - 75

SP - 1410

EP - 1412

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

ER -

Reduction of band-gap energy in GaNAs and AlGaNAs synthesized by N+ implantation

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