TY - GEN
T1 - Reducing surface defects of CrxOy film in mid-frequency dual-magnetron sputtering
AU - Yu, Xiang
AU - Ma, Lei
AU - Liu, Yang
AU - Yang, Zhongzhou
AU - Hua, Meng
PY - 2011
Y1 - 2011
N2 - Influence of the process parameters of a reactive mid-frequency dual-magnetron sputtering on surface defects of CrxOy film was investigated. The forming mechanisms of the observed droplets and craters were analyzed. The optimal parameter combination for accomplishing fewer surface defects was explored; and the optimized process parameters evidently minimized the surface defects of the film. In the condition of the target current of 16 A, the gases pressure of 0.31 Pa, and the bias voltages in a range of-120∼-240 V, an optimized CrxOy film has been synthesized with surface defect density low to 78 defect/mm-2. © (2011) Trans Tech Publications, Switzerland.
AB - Influence of the process parameters of a reactive mid-frequency dual-magnetron sputtering on surface defects of CrxOy film was investigated. The forming mechanisms of the observed droplets and craters were analyzed. The optimal parameter combination for accomplishing fewer surface defects was explored; and the optimized process parameters evidently minimized the surface defects of the film. In the condition of the target current of 16 A, the gases pressure of 0.31 Pa, and the bias voltages in a range of-120∼-240 V, an optimized CrxOy film has been synthesized with surface defect density low to 78 defect/mm-2. © (2011) Trans Tech Publications, Switzerland.
KW - CrxOy film
KW - Forming mechanism
KW - Mid-frequency dual-magnetron sputtering
KW - Surface defect
UR - https://www.scopus.com/pages/publications/79961195121
UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-79961195121&origin=recordpage
U2 - 10.4028/www.scientific.net/AMR.291-294.219
DO - 10.4028/www.scientific.net/AMR.291-294.219
M3 - RGC 32 - Refereed conference paper (with host publication)
SN - 9783037851937
VL - 291-294
T3 - Advanced Materials Research
SP - 219
EP - 222
BT - Materials Processing Technology
T2 - 2011 International Conference on Advanced Engineering Materials and Technology (AEMT 2011)
Y2 - 29 July 2011 through 31 July 2011
ER -