Reducing Migration of Sintered Ag for Power Devices Operating at High Temperature

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

2 Scopus Citations
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Author(s)

  • Dan Li
  • Yunhui Mei
  • Yunchang Xin
  • Zhiqiao Li
  • Changsheng Ma
  • Guo-Quan Lu

Detail(s)

Original languageEnglish
Pages (from-to)12646-12650
Journal / PublicationIEEE Transactions on Power Electronics
Volume35
Issue number12
Online published13 May 2020
Publication statusPublished - Dec 2020

Abstract

Wide-bandgap power devices are usually operated at a higher temperature or larger electrical bias and the harsh conditions often lead to early failure of the widely used Ag-based die-attach materials due to electrochemical migration (ECM). Common methods to mitigate ECM tend to be quite costly and can only enhance the performance slightly under high-temperature conditions. In this letter, novel nano-Ag-based die-attach materials are designed and prepared by doping with 0.1 wt% Si nanoparticles. The higher affinity of Si to oxygen reduces oxidation of silver and increases the median time to failure at 400 °C by 4.8 times. According to the life prediction model, the materials extend the lifetime for operation at 200 °C from 9.5 to 63 years, while the cost remains unchanged. The sintered nano-Ag-0.1%Si die attachment has long-term reliability rendering them desirable for power devices operating at a high temperature.

Research Area(s)

  • Electrochemical migration (ECM), high temperatures, nano-AG, sintering

Citation Format(s)

Reducing Migration of Sintered Ag for Power Devices Operating at High Temperature. / Li, Dan; Mei, Yunhui; Xin, Yunchang; Li, Zhiqiao; Chu, Paul K.; Ma, Changsheng; Lu, Guo-Quan.

In: IEEE Transactions on Power Electronics, Vol. 35, No. 12, 12.2020, p. 12646-12650.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review