Reducing dislocation density by sequential implantation of Ge and in Si

Seongil Im; Jack Washburn; Ronald Gronsky; Nathan W. Cheung; Kin Man Yu; Joel W. Ager

Reducing dislocation density by sequential implantation of Ge and in Si

Seongil Im
, Jack Washburn
, Ronald Gronsky
, Nathan W. Cheung
, Kin Man Yu
, Joel W. Ager

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

Abstract

Carbon implantation was performed after high dose (5×10¹⁶/cm²) Ge implantation into [100] oriented Si substrates to study the effect of sequential implantation on dislocation nucleation. When the nominal peak concentration of implanted C is over 0.55 at%, Dislocations in the SiGe layer containing C are considerably reduced in density after solid phase epitaxial (SPE) annealing at 800°C for 1 hour, compared to the SiGe layer without C. These results suggest that during annealing, C atoms compensate the Ge-induced misfit strain which causes dislocation generation in the region of peak Ge concentration. Channeling spectra obtained by RBS analysis show only 5% to 6% minimum back scattering yield as C atoms suppress the dislocation generation.

Original language	English
Title of host publication	Materials Research Society Symposium Proceedings
Publisher	Publ by Materials Research Society
Pages	139-143
Volume	298
ISBN (Print)	1558991948
Publication status	Published - 1993
Externally published	Yes
Event	Proceedings of the Symposium on Silicon-Based Optoelectronic Materials - San Francisco, CA, USA Duration: 12 Apr 1993 → 14 Apr 1993

Publication series

Name
Volume	298
ISSN (Electronic)	0272-9172

Conference

Conference	Proceedings of the Symposium on Silicon-Based Optoelectronic Materials
City	San Francisco, CA, USA
Period	12/04/93 → 14/04/93

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@inproceedings{7e1a4de48fc6459eb01529b4179186d9,

title = "Reducing dislocation density by sequential implantation of Ge and in Si",

abstract = "Carbon implantation was performed after high dose (5×1016/cm2) Ge implantation into [100] oriented Si substrates to study the effect of sequential implantation on dislocation nucleation. When the nominal peak concentration of implanted C is over 0.55 at\%, Dislocations in the SiGe layer containing C are considerably reduced in density after solid phase epitaxial (SPE) annealing at 800°C for 1 hour, compared to the SiGe layer without C. These results suggest that during annealing, C atoms compensate the Ge-induced misfit strain which causes dislocation generation in the region of peak Ge concentration. Channeling spectra obtained by RBS analysis show only 5\% to 6\% minimum back scattering yield as C atoms suppress the dislocation generation.",

author = "Seongil Im and Jack Washburn and Ronald Gronsky and Cheung, \{Nathan W.\} and Yu, \{Kin Man\} and Ager, \{Joel W.\}",

year = "1993",

language = "English",

isbn = "1558991948",

volume = "298",

publisher = "Publ by Materials Research Society",

pages = "139--143",

booktitle = "Materials Research Society Symposium Proceedings",

note = "Proceedings of the Symposium on Silicon-Based Optoelectronic Materials ; Conference date: 12-04-1993 Through 14-04-1993",

}

Reducing dislocation density by sequential implantation of Ge and in Si. / Im, Seongil; Washburn, Jack; Gronsky, Ronald et al.
Materials Research Society Symposium Proceedings. Vol. 298 Publ by Materials Research Society, 1993. p. 139-143.

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

TY - GEN

T1 - Reducing dislocation density by sequential implantation of Ge and in Si

AU - Im, Seongil

AU - Washburn, Jack

AU - Gronsky, Ronald

AU - Cheung, Nathan W.

AU - Yu, Kin Man

AU - Ager, Joel W.

PY - 1993

Y1 - 1993

N2 - Carbon implantation was performed after high dose (5×1016/cm2) Ge implantation into [100] oriented Si substrates to study the effect of sequential implantation on dislocation nucleation. When the nominal peak concentration of implanted C is over 0.55 at%, Dislocations in the SiGe layer containing C are considerably reduced in density after solid phase epitaxial (SPE) annealing at 800°C for 1 hour, compared to the SiGe layer without C. These results suggest that during annealing, C atoms compensate the Ge-induced misfit strain which causes dislocation generation in the region of peak Ge concentration. Channeling spectra obtained by RBS analysis show only 5% to 6% minimum back scattering yield as C atoms suppress the dislocation generation.

AB - Carbon implantation was performed after high dose (5×1016/cm2) Ge implantation into [100] oriented Si substrates to study the effect of sequential implantation on dislocation nucleation. When the nominal peak concentration of implanted C is over 0.55 at%, Dislocations in the SiGe layer containing C are considerably reduced in density after solid phase epitaxial (SPE) annealing at 800°C for 1 hour, compared to the SiGe layer without C. These results suggest that during annealing, C atoms compensate the Ge-induced misfit strain which causes dislocation generation in the region of peak Ge concentration. Channeling spectra obtained by RBS analysis show only 5% to 6% minimum back scattering yield as C atoms suppress the dislocation generation.

UR - https://www.scopus.com/pages/publications/0027869537

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0027869537&origin=recordpage

M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 1558991948

VL - 298

SP - 139

EP - 143

BT - Materials Research Society Symposium Proceedings

PB - Publ by Materials Research Society

T2 - Proceedings of the Symposium on Silicon-Based Optoelectronic Materials

Y2 - 12 April 1993 through 14 April 1993

ER -

Reducing dislocation density by sequential implantation of Ge and in Si

Abstract

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