Redistribution of As during Pd2Si formation: Ion channeling measurements

M. Wittmer; C. Y. Ting; I. Ohdomari; K. N. Tu

doi:10.1063/1.330066

Redistribution of As during Pd₂Si formation: Ion channeling measurements

M. Wittmer
, C. Y. Ting
, I. Ohdomari
, K. N. Tu

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

37 Citations (Scopus)

Abstract

We have investigated the redistribution of As during Pd₂Si formation with ion channeling technique. The results show that both interstitial As and substitutional As in the Si are pushed ahead by the moving silicide-silicon interface during the growth of Pd₂Si at 250 °C. This effect increases the As concentration in a region of about 100 Å beyond the interface. A model for the mechanism of As redistribution during silicide formation is suggested and implications of the effect on electrical characteristics of Schottky diodes and shallow junction devices are discussed.

Original language	English
Pages (from-to)	6781-6787
Journal	Journal of Applied Physics
Volume	53
Issue number	10
DOIs	https://doi.org/10.1063/1.330066
Publication status	Published - 1982
Externally published	Yes

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Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

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@article{8a98b2d7f86641ee918f7119c9604d7c,

title = "Redistribution of As during Pd2Si formation: Ion channeling measurements",

abstract = "We have investigated the redistribution of As during Pd2Si formation with ion channeling technique. The results show that both interstitial As and substitutional As in the Si are pushed ahead by the moving silicide-silicon interface during the growth of Pd2Si at 250 °C. This effect increases the As concentration in a region of about 100 {\AA} beyond the interface. A model for the mechanism of As redistribution during silicide formation is suggested and implications of the effect on electrical characteristics of Schottky diodes and shallow junction devices are discussed.",

author = "M. Wittmer and Ting, \{C. Y.\} and I. Ohdomari and Tu, \{K. N.\}",

note = "Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].",

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doi = "10.1063/1.330066",

language = "English",

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journal = "Journal of Applied Physics",

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TY - JOUR

T1 - Redistribution of As during Pd2Si formation

T2 - Ion channeling measurements

AU - Wittmer, M.

AU - Ting, C. Y.

AU - Ohdomari, I.

AU - Tu, K. N.

N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

PY - 1982

Y1 - 1982

N2 - We have investigated the redistribution of As during Pd2Si formation with ion channeling technique. The results show that both interstitial As and substitutional As in the Si are pushed ahead by the moving silicide-silicon interface during the growth of Pd2Si at 250 °C. This effect increases the As concentration in a region of about 100 Å beyond the interface. A model for the mechanism of As redistribution during silicide formation is suggested and implications of the effect on electrical characteristics of Schottky diodes and shallow junction devices are discussed.

AB - We have investigated the redistribution of As during Pd2Si formation with ion channeling technique. The results show that both interstitial As and substitutional As in the Si are pushed ahead by the moving silicide-silicon interface during the growth of Pd2Si at 250 °C. This effect increases the As concentration in a region of about 100 Å beyond the interface. A model for the mechanism of As redistribution during silicide formation is suggested and implications of the effect on electrical characteristics of Schottky diodes and shallow junction devices are discussed.

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U2 - 10.1063/1.330066

DO - 10.1063/1.330066

M3 - RGC 21 - Publication in refereed journal

SN - 0021-8979

VL - 53

SP - 6781

EP - 6787

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 10

ER -