Redistribution of As during Pd₂Si formation: Electrical measurements

We have investigated the redistribution of As during Pd₂Si formation with electrical measurements. Our results are in agreement with the earlier findings that part of the shallow implanted As is pushed ahead by the moving silicide-silicon interface at 250°C. We show that, owing to the As redistribution, Pd₂Si contacts can be formed to shallow junction diodes without altering the junction properties, because the junction is displaced by the approaching silicide-silicon interface. We also demonstrate that the increase in the As concentration beneath the silicide-silicon interface reduces contact resistance. Finally, we discuss the use of the As redistribution to adjust the barrier height of Schottky diodes and other applications in submicron integrated circuit technology.