Redistribution of As during Pd2Si formation : Ion channeling measurements
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
Author(s)
Detail(s)
| Original language | English |
|---|---|
| Pages (from-to) | 6781-6787 |
| Journal / Publication | Journal of Applied Physics |
| Volume | 53 |
| Issue number | 10 |
| Publication status | Published - 1982 |
| Externally published | Yes |
Link(s)
Abstract
We have investigated the redistribution of As during Pd2Si formation with ion channeling technique. The results show that both interstitial As and substitutional As in the Si are pushed ahead by the moving silicide-silicon interface during the growth of Pd2Si at 250 °C. This effect increases the As concentration in a region of about 100 Å beyond the interface. A model for the mechanism of As redistribution during silicide formation is suggested and implications of the effect on electrical characteristics of Schottky diodes and shallow junction devices are discussed.
Bibliographic Note
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Citation Format(s)
Redistribution of As during Pd2Si formation: Ion channeling measurements. / Wittmer, M.; Ting, C. Y.; Ohdomari, I. et al.
In: Journal of Applied Physics, Vol. 53, No. 10, 1982, p. 6781-6787.
In: Journal of Applied Physics, Vol. 53, No. 10, 1982, p. 6781-6787.
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
