Recent Progress on Electronics and Optoelectronics Based on 2D Tellurium

Jiajia Zha; Haoxin Huang; Chaoliang Tan

doi:10.1109/EDTM61175.2025.11040863

Recent Progress on Electronics and Optoelectronics Based on 2D Tellurium

Jiajia Zha, Haoxin Huang, Chaoliang Tan^*

^*Corresponding author for this work

Department of Electrical Engineering

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

Abstract

Tellurium (Te), an emerging p-type van der Waals (vdW) semiconductor, has attracted great attention since its rediscovery. Its unique quasi-one-dimensional (1D) crystal structure grants it high hole mobilities and tunable bandgaps, covering short wavelength infrared (SWIR) spectrum. These properties lay the foundation for its applications in advanced electronics and optoelectronics, including p-type field-effect transistors (FETs), infrared (IR) photodetectors, and memory devices. Here, we summarize the recent progress made by our group on Te-enabled devices. © 2025 IEEE.

Original language	English
Title of host publication	The 9th IEEE Electron Devices Technology and Manufacturing Conference (EDTM 2025)
Subtitle of host publication	Shaping the Future with Innovations in Devices and Manufacturing
Publisher	IEEE
Number of pages	3
ISBN (Electronic)	9798331504168
ISBN (Print)	979-8-3315-0417-5
DOIs	https://doi.org/10.1109/EDTM61175.2025.11040863
Publication status	Published - 2025
Event	9th IEEE Electron Devices Technology and Manufacturing Conference (EDTM 2025) - , Hong Kong, China Duration: 9 Mar 2025 → 12 Mar 2025

Publication series

Name	IEEE Electron Devices Technology and Manufacturing Conference EDTM

Conference

Conference	9th IEEE Electron Devices Technology and Manufacturing Conference (EDTM 2025)
Place	Hong Kong, China
Period	9/03/25 → 12/03/25

Funding

C.T. thanks the funding support from the National Natural Science Foundation of China - Excellent Young Scientists Fund (Hong Kong and Macau) (52122002), ECS Scheme (21201821), and General Research Fund (11200122) from the Research Grant Council of Hong Kong.

Research Keywords

Electronics
Optoelectronics
Tellurium

RGC Funding Information

RGC-funded

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10.1109/EDTM61175.2025.11040863

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Zha, J., Huang, H., & Tan, C. (2025). Recent Progress on Electronics and Optoelectronics Based on 2D Tellurium. In The 9th IEEE Electron Devices Technology and Manufacturing Conference (EDTM 2025): Shaping the Future with Innovations in Devices and Manufacturing (IEEE Electron Devices Technology and Manufacturing Conference EDTM). IEEE. https://doi.org/10.1109/EDTM61175.2025.11040863

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title = "Recent Progress on Electronics and Optoelectronics Based on 2D Tellurium",

abstract = "Tellurium (Te), an emerging p-type van der Waals (vdW) semiconductor, has attracted great attention since its rediscovery. Its unique quasi-one-dimensional (1D) crystal structure grants it high hole mobilities and tunable bandgaps, covering short wavelength infrared (SWIR) spectrum. These properties lay the foundation for its applications in advanced electronics and optoelectronics, including p-type field-effect transistors (FETs), infrared (IR) photodetectors, and memory devices. Here, we summarize the recent progress made by our group on Te-enabled devices. {\textcopyright} 2025 IEEE.",

keywords = "Electronics, Optoelectronics, Tellurium",

author = "Jiajia Zha and Haoxin Huang and Chaoliang Tan",

year = "2025",

doi = "10.1109/EDTM61175.2025.11040863",

language = "English",

isbn = "979-8-3315-0417-5",

series = "IEEE Electron Devices Technology and Manufacturing Conference EDTM",

publisher = "IEEE",

booktitle = "The 9th IEEE Electron Devices Technology and Manufacturing Conference (EDTM 2025)",

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note = "9th IEEE Electron Devices Technology and Manufacturing Conference (EDTM 2025) ; Conference date: 09-03-2025 Through 12-03-2025",

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Zha, J , Huang, H & Tan, C 2025, Recent Progress on Electronics and Optoelectronics Based on 2D Tellurium. in The 9th IEEE Electron Devices Technology and Manufacturing Conference (EDTM 2025): Shaping the Future with Innovations in Devices and Manufacturing. IEEE Electron Devices Technology and Manufacturing Conference EDTM, IEEE, 9th IEEE Electron Devices Technology and Manufacturing Conference (EDTM 2025), Hong Kong, China, 9/03/25. https://doi.org/10.1109/EDTM61175.2025.11040863

Recent Progress on Electronics and Optoelectronics Based on 2D Tellurium. / Zha, Jiajia ; Huang, Haoxin ; Tan, Chaoliang.
The 9th IEEE Electron Devices Technology and Manufacturing Conference (EDTM 2025): Shaping the Future with Innovations in Devices and Manufacturing. IEEE, 2025. (IEEE Electron Devices Technology and Manufacturing Conference EDTM).

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

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T1 - Recent Progress on Electronics and Optoelectronics Based on 2D Tellurium

AU - Zha, Jiajia

AU - Huang, Haoxin

AU - Tan, Chaoliang

PY - 2025

Y1 - 2025

N2 - Tellurium (Te), an emerging p-type van der Waals (vdW) semiconductor, has attracted great attention since its rediscovery. Its unique quasi-one-dimensional (1D) crystal structure grants it high hole mobilities and tunable bandgaps, covering short wavelength infrared (SWIR) spectrum. These properties lay the foundation for its applications in advanced electronics and optoelectronics, including p-type field-effect transistors (FETs), infrared (IR) photodetectors, and memory devices. Here, we summarize the recent progress made by our group on Te-enabled devices. © 2025 IEEE.

AB - Tellurium (Te), an emerging p-type van der Waals (vdW) semiconductor, has attracted great attention since its rediscovery. Its unique quasi-one-dimensional (1D) crystal structure grants it high hole mobilities and tunable bandgaps, covering short wavelength infrared (SWIR) spectrum. These properties lay the foundation for its applications in advanced electronics and optoelectronics, including p-type field-effect transistors (FETs), infrared (IR) photodetectors, and memory devices. Here, we summarize the recent progress made by our group on Te-enabled devices. © 2025 IEEE.

KW - Electronics

KW - Optoelectronics

KW - Tellurium

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DO - 10.1109/EDTM61175.2025.11040863

M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 979-8-3315-0417-5

T3 - IEEE Electron Devices Technology and Manufacturing Conference EDTM

BT - The 9th IEEE Electron Devices Technology and Manufacturing Conference (EDTM 2025)

PB - IEEE

T2 - 9th IEEE Electron Devices Technology and Manufacturing Conference (EDTM 2025)

Y2 - 9 March 2025 through 12 March 2025

ER -

Zha J , Huang H , Tan C. Recent Progress on Electronics and Optoelectronics Based on 2D Tellurium. In The 9th IEEE Electron Devices Technology and Manufacturing Conference (EDTM 2025): Shaping the Future with Innovations in Devices and Manufacturing. IEEE. 2025. (IEEE Electron Devices Technology and Manufacturing Conference EDTM). Epub 2025 Jun 30. doi: 10.1109/EDTM61175.2025.11040863

Recent Progress on Electronics and Optoelectronics Based on 2D Tellurium

Abstract

Publication series

Conference

Funding

Research Keywords

RGC Funding Information

Access Output

Other Access Options

Permanent Link

Other Files and Links

Fingerprint

GRF: Growth of High-Quality Tellurium Thin Films via Substrate Engineering for High-Performance p-Type Field-Effect Transistors and Circuits

Cite this

Recent Progress on Electronics and Optoelectronics Based on 2D Tellurium

Abstract

Publication series

Conference

Funding

Research Keywords

RGC Funding Information

Access Output

Other Access Options

Permanent Link

Other Files and Links

Fingerprint

Projects

GRF: Growth of High-Quality Tellurium Thin Films via Substrate Engineering for High-Performance p-Type Field-Effect Transistors and Circuits

Cite this