Abstract
Currently there is great interest in patterned silicon nanowire arrays and applications. The accurately controlled fabrication of patterned silicon nanowire arrays with the desirable axial crystallographic orientation using simpler and quicker ways is very desirable and of great importance to material synthesis and future nanoscale optoelectronic devices that employ silicon. The recent advances in manipulating patterned silicon nanowire arrays and patents are reviewed with a focus on the progress of nanowire fabrication and applications. © 2011 Bentham Science Publishers Ltd.
| Original language | English |
|---|---|
| Pages (from-to) | 62-70 |
| Journal | Recent Patents on Nanotechnology |
| Volume | 5 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2011 |
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 7 Affordable and Clean Energy
Research Keywords
- Chemical vapor deposition
- Field-effect transistor
- Molecular beam epitaxy
- Patterned silicon nanowire arrays
- Selfselective electroless plating
- Si solar cells
- Thermal conductivity
- Thermal evaporation
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