Recent developments in silicon optoelectronic devices

Hei Wong

doi:10.1109/MIEL.2002.1003194

Recent developments in silicon optoelectronic devices

Hei Wong

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

6 Citations (Scopus)

Abstract

Due to the rapid growth of the internet and multi-media communication networks, there are urgent needs and tremendous commercial values in the development of optoelectronics integrated circuits (OEICs). This work reviews the recent developments and the prospect of silicon-based integrated optoelectronic circuits (Si-OEICs). The technological aspects of porous silicon and oxynitride devices for integrated optoelectronic applications are discussed. Some optoelectronic devices being realized with these technologies are described. Recent achievements indicate that the present constraints for using Si-based materials in optoelectronics are mainly technological rather than physical. Once these technological difficulties are resolved, the realization and applications of Si-OEICs will growth rapidly. © 2002 IEEE.

Original language	English
Title of host publication	2002 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings
Publisher	IEEE Computer Society
Pages	285-292
Volume	1
ISBN (Print)	0780372352, 9780780372351
DOIs	https://doi.org/10.1109/MIEL.2002.1003194
Publication status	Published - 2002
Externally published	Yes
Event	2002 23rd International Conference on Microelectronics, MIEL 2002 - Nis, Serbia Duration: 12 May 2002 → 15 May 2002 https://ieeexplore.ieee.org/xpl/conhome/7858/proceeding

Publication series

Name
Volume	1

Conference

Conference	2002 23rd International Conference on Microelectronics, MIEL 2002
Place	Serbia
City	Nis
Period	12/05/02 → 15/05/02
Internet address	https://ieeexplore.ieee.org/xpl/conhome/7858/proceeding

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10.1109/MIEL.2002.1003194

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title = "Recent developments in silicon optoelectronic devices",

abstract = "Due to the rapid growth of the internet and multi-media communication networks, there are urgent needs and tremendous commercial values in the development of optoelectronics integrated circuits (OEICs). This work reviews the recent developments and the prospect of silicon-based integrated optoelectronic circuits (Si-OEICs). The technological aspects of porous silicon and oxynitride devices for integrated optoelectronic applications are discussed. Some optoelectronic devices being realized with these technologies are described. Recent achievements indicate that the present constraints for using Si-based materials in optoelectronics are mainly technological rather than physical. Once these technological difficulties are resolved, the realization and applications of Si-OEICs will growth rapidly. {\textcopyright} 2002 IEEE.",

author = "Hei Wong",

year = "2002",

doi = "10.1109/MIEL.2002.1003194",

language = "English",

isbn = "0780372352",

volume = "1",

publisher = "IEEE Computer Society",

pages = "285--292",

booktitle = "2002 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings",

address = "United States",

note = "2002 23rd International Conference on Microelectronics, MIEL 2002 ; Conference date: 12-05-2002 Through 15-05-2002",

url = "https://ieeexplore.ieee.org/xpl/conhome/7858/proceeding",

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TY - GEN

T1 - Recent developments in silicon optoelectronic devices

AU - Wong, Hei

PY - 2002

Y1 - 2002

N2 - Due to the rapid growth of the internet and multi-media communication networks, there are urgent needs and tremendous commercial values in the development of optoelectronics integrated circuits (OEICs). This work reviews the recent developments and the prospect of silicon-based integrated optoelectronic circuits (Si-OEICs). The technological aspects of porous silicon and oxynitride devices for integrated optoelectronic applications are discussed. Some optoelectronic devices being realized with these technologies are described. Recent achievements indicate that the present constraints for using Si-based materials in optoelectronics are mainly technological rather than physical. Once these technological difficulties are resolved, the realization and applications of Si-OEICs will growth rapidly. © 2002 IEEE.

AB - Due to the rapid growth of the internet and multi-media communication networks, there are urgent needs and tremendous commercial values in the development of optoelectronics integrated circuits (OEICs). This work reviews the recent developments and the prospect of silicon-based integrated optoelectronic circuits (Si-OEICs). The technological aspects of porous silicon and oxynitride devices for integrated optoelectronic applications are discussed. Some optoelectronic devices being realized with these technologies are described. Recent achievements indicate that the present constraints for using Si-based materials in optoelectronics are mainly technological rather than physical. Once these technological difficulties are resolved, the realization and applications of Si-OEICs will growth rapidly. © 2002 IEEE.

UR - https://www.scopus.com/pages/publications/5544288411

UR - https://www.scopus.com/pages/publications/5544288411#tab=impact

U2 - 10.1109/MIEL.2002.1003194

DO - 10.1109/MIEL.2002.1003194

M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 0780372352

SN - 9780780372351

VL - 1

SP - 285

EP - 292

BT - 2002 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings

PB - IEEE Computer Society

T2 - 2002 23rd International Conference on Microelectronics, MIEL 2002

Y2 - 12 May 2002 through 15 May 2002

ER -

Recent developments in silicon optoelectronic devices

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